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The BF1201R,215 is an N-channel dual-gate PoLo MOS-FET encapsulated in the SOT343R plastic package. It features a short channel transistor with high forward transfer admittance to input capacitance ratio and partly internal self-biasing circuitry for DC stabilization. Key electrical parameters include a drain-source voltage of 10 V, a maximum drain current of 30 mA, and total power dissipation of 200 mW. The device exhibits a typical forward transfer admittance of 28 mS, an input capacitance at gate 1 of 2.6 pF, and a noise figure of 11.8 dB at 400 MHz.
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Select this component when designing circuits requiring low-noise amplification in the VHF and UHF bands. The dual-gate structure allows for effective gain control via the AGC voltage on Gate 2 while maintaining stable bias conditions through the internal circuitry on Gate 1. Ensure the design accommodates the 10 V drain-source voltage limit and utilizes the SOT343R package constraints for thermal management.
This device belongs to the BF1201 family of N-channel dual-gate PoLo MOS-FETs from NXP Semiconductors. The family includes variants such as the BF1201 (SOT143B) and BF1201WR (SOT343R), which share similar electrical characteristics but differ in physical packaging. These components are designed for RF signal processing tasks where low noise and high linearity are critical.
Direct replacements within the same family include the BF1201 and BF1201WR. Note that these alternatives utilize different packages (SOT143B and SOT343R respectively). Verify pinout compatibility, particularly regarding reverse pinning configurations in the SOT343R variant, before substituting.