BF1201WR,115

Overview

The BF1201WR,115 is an N-channel dual-gate PoLo MOS-FET manufactured by NXP Semiconductors. It features a short channel design with high forward transfer admittance to input capacitance ratio. The device operates with a drain-source voltage of 10 V and a continuous drain current of 30 mA. Total power dissipation is rated at 200 mW. Forward transfer admittance ranges from 23 to 35 mS. Input capacitance at gate 1 is typically 2.6 pF. Reverse transfer capacitance is 15 fF at 1 MHz. Noise figure is 11.8 dB at 400 MHz. Cross-modulation input level for 1% distortion at 40 dB AGC is 105 dBμV. Operating junction temperature reaches 150 °C.

Feature Summary

• Dual-gate enhancement type N-channel field-effect transistor with source and substrate interconnected.
• Integrated diodes between gates and source protect against excessive input voltage surges.
• Partly internal self-biasing circuit ensures good cross-modulation performance during automatic gain control.
• Short channel transistor provides high forward transfer admittance to input capacitance ratio.

Applications

• VHF and UHF applications with 3 to 9 V supply voltage
• Digital and analogue television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix matches the required package variant. The BF1201WR designation corresponds to the SOT343R plastic surface-mounted package. Confirm that the component status aligns with project requirements, as discrete semiconductor availability may vary. Ensure electrostatic discharge precautions are observed during handling and transport due to anti-static packing specifications.

Selection Notes

Select this component for low noise gain controlled amplifier designs requiring dual-gate isolation. The internal self-biasing circuit simplifies DC stabilization in automatic gain control loops. Verify thermal resistance constraints for the SOT343R package under maximum power dissipation conditions. Ensure operating frequencies match the specified admittance and capacitance characteristics for optimal signal integrity.

Part Context

This part belongs to the BF1201 series of N-channel dual-gate PoLo MOS-FETs. Variants include BF1201 in SOT143B and BF1201R in SOT143R packages. All share identical electrical specifications but differ in physical encapsulation. The series is designed for RF applications where low noise and high linearity are critical. The dual-gate structure allows independent control of gain and impedance matching.

Replacement Considerations

BF1201 and BF1201R are electrically equivalent alternatives within the same product family. They offer identical performance metrics but utilize different package outlines (SOT143B and SOT143R respectively). Verify footprint compatibility before substitution. No other public substitute part numbers are confirmed in the documentation.