BF1205C,115

Overview

The BF1205C,115 is a dual N-channel dual gate MOS-FET in a SOT363 package. It integrates two amplifiers with shared source and gate leads plus an internal switch controlled by amplifier B's bias. Key electrical parameters include a drain-source voltage of 6 V, DC drain current of 30 mA, and total power dissipation of 180 mW. Forward transfer admittance ranges from 26 to 43 mS depending on the amplifier section. Input capacitance at Gate 1 is approximately 2.0 to 2.7 pF, while reverse transfer capacitance is 20 fF. Noise figures are 1.3 to 1.9 dB at 400 MHz and 1.4 to 2.1 dB at 800 MHz.

Feature Summary

• Combines two low noise gain controlled amplifiers in a single package, one with fully integrated bias and one with partly integrated bias.
• Includes an internal switch operated by the gate 1 bias of amplifier b to reduce external component count.
• Provides superior cross-modulation performance during automatic gain control (AGC).
• Features high forward transfer admittance and a high ratio of admittance to input capacitance.

Applications

• Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage
• Digital and analog television tuners
• Professional communication equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing VHF/UHF low noise amplifiers requiring a 5 V supply. The device offers two distinct amplifier sections: one with fully integrated bias and another with partial integration. Ensure the design accommodates the 6 V maximum drain-source voltage and utilizes the internal switch functionality to minimize external circuitry complexity.

Part Context

This part belongs to NXP Semiconductors' discrete RF MOSFET portfolio. It is designed as a specialized solution for tuners and communication systems where space constraints and signal integrity are critical. The dual-gate architecture allows for precise gain control and isolation between stages within a micro-miniature plastic package.

Replacement Considerations

No public confirmed substitute part numbers are available in the documentation.

FAQ

How is the internal switch in the BF1205C activated?

The integrated switch is operated by the gate 1 bias of amplifier b.

What protection does the BF1205C provide against input voltage surges?

Integrated diodes between the gates and source protect the device against excessive input voltage surges.

Does the BF1205C support automatic gain control (AGC)?

Yes, the device features internal bias circuits that enable DC stabilization and superior cross-modulation performance specifically during AGC operation.