BF1211R,215

Overview

The BF1211R,215 is an N-channel dual-gate MOS-FET in the SOT143R package. It features a drain-source voltage of 6 V and a continuous drain current of 30 mA with total power dissipation of 180 mW. The forward transfer admittance ranges from 25 to 40 mS, while input capacitance at gate 1 is typically 2.1 pF. Noise figures are 0.9 dB at 400 MHz and 3.5 dB at 11 MHz. Junction temperature reaches 150 °C.

Feature Summary

• Dual-gate architecture provides low noise gain controlled amplification with excellent low frequency noise performance.
• Integrated internal self-biasing circuit ensures good cross-modulation performance during automatic gain control and stable DC operation.
• Internal diodes between gates and source protect against excessive input voltage surges.

Applications

• Gain controlled low noise VHF amplifiers for television tuner applications
• Low noise UHF amplifiers for 5 V digital and analog television tuner applications

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing low noise amplifiers requiring dual-gate isolation for improved stability and reduced feedback. The SOT143R package suits surface mount designs needing reverse pinning compatibility. Ensure operating conditions remain within the 6 V drain-source limit and 180 mW power dissipation threshold to maintain reliability.

Part Context

This device belongs to the BF1211 series of N-channel dual-gate MOS-FETs manufactured by NXP Semiconductors. It shares core electrical characteristics with the BF1211 and BF1211WR variants but utilizes the SOT143R plastic surface-mounted package with reverse pinning configuration for distinct board layout requirements.

Replacement Considerations

Direct replacements include the BF1211 (SOT143B) and BF1211WR (SOT343R). Verify pinout orientation differences due to reverse pinning variations before substitution.

FAQ

How does the dual-gate structure benefit amplifier design?

The dual-gate structure allows independent control of gain via Gate 2 while maintaining signal input at Gate 1, providing better isolation and reduced feedback compared to single-gate devices.

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 150 °C.