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The BF2030E6814HTSA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It operates at a voltage of 5 V and features a dual-gate configuration with an external biasing option for Gate 1. The device provides a typical power gain of 23 dB and a noise figure of 1.5 dB at 800 MHz. Key electrical parameters include a drain-source breakdown voltage of 10 V, continuous drain current of 40 mA, and total power dissipation of 200 mW. It is housed in a SOT-143 package.
Verify the specific package variant (SOT-143, SOT-143R, or SOT-343) required for the design, as the BF2030 series includes multiple physical configurations. Confirm RoHS compliance status and check for any special requests regarding Pb-containing packages if applicable. Ensure handling precautions are observed due to ESD sensitivity.
Select this component when designing RF front-ends requiring high gain and low noise figures around 800 MHz to 1 GHz. The dual-gate structure allows for independent biasing and gain adjustment via the AGC pin. Consider the thermal resistance limits and maximum power dissipation constraints when determining heat sinking requirements for the SOT-143 package.
This part belongs to the BF2030 series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The series is engineered for RF applications demanding high linearity and gain control. The HTSA1 suffix typically denotes the specific tape-and-reel packaging format compatible with automated assembly processes.
Direct substitutes within the same family include BF2030R (SOT-143R package) and BF2030W (SOT-343 package). Verify pinout compatibility and thermal characteristics before substitution, as package dimensions and thermal resistance values differ between SOT-143, SOT-143R, and SOT-343 variants.