BF2030RE6814HTSA1

Overview

The BF2030RE6814HTSA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It operates at a standard voltage of 5 V and features an SOT-143R surface-mount package. Key electrical parameters include a drain-source voltage (VDS) of 8 V, continuous drain current (ID) of 40 mA, and total power dissipation (Ptot) of 200 mW. At 800 MHz with VDS = 5 V and ID = 10 mA, it provides a typical power gain of 23 dB and a noise figure of 1.5 dB.

Feature Summary

• Dual-gate architecture enabling precise gain control via AGC input
• Optimized for low noise and high gain performance in RF front ends
• Qualified according to AEC Q101 automotive standards

Applications

• Low noise amplifier (LNA) stages
• High gain controlled input stages
• RF circuits operating up to 1 GHz

Procurement Notes

Verify the specific suffix 'E6814' corresponds to the SOT-143R package variant when sourcing. Confirm RoHS compliance status and check for any lead-free packaging requirements. Ensure the component meets AEC Q101 qualification if used in automotive contexts. Cross-reference the manufacturer part number with authorized distributors to confirm availability and authenticity.

Selection Notes

Select this component for designs requiring dual-gate isolation and external gain control. The device supports operation within a temperature range of -55 °C to +150 °C. Consider the thermal resistance of 370 K/W for the SOT-143R package when designing heat dissipation strategies. Ensure gate biasing circuits accommodate the specified breakdown voltages.

Part Context

This component belongs to the BF2030 series of silicon N-channel MOSFET tetrodes from Infineon Technologies. The series includes variants such as BF2030 (SOT-143) and BF2030W (SOT-343). The RE6814HTSA1 designation specifically identifies the SOT-143R package version with tape-and-reel packaging.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate other Infineon RF MOSFETs with similar dual-gate architectures and comparable S-parameter profiles. Verify pin compatibility and ensure that alternative devices meet the required 8 V drain-source voltage and 200 mW power dissipation limits.