BF2030WE6814BTSA1

Overview

The BF2030WE6814BTSA1 is a silicon N-channel MOSFET tetrode manufactured by Infineon Technologies. It operates with a drain-source voltage of 8 V and a continuous drain current of 40 mA, housed in an SOT-343 surface-mount package. The device supports a total power dissipation of 200 mW at a case temperature up to 94 °C. Electrical characteristics include a forward transconductance of 31 mS and a typical power gain of 23 dB at 800 MHz. It features a low noise figure of 2.2 dB and a gain control range of 50 dB under specified biasing conditions.

Feature Summary

• Dual-gate architecture designed for controlled input stages
• Optimized for high gain and low noise performance
• Capable of operation up to 1 GHz frequency range
• Qualified according to AEC-Q101 automotive standards

Applications

• Low noise amplifier (LNA) input stages
• High gain RF amplification circuits
• Automotive radio receiver front ends

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm the exact package variant and tape-and-reel specifications. Confirm RoHS compliance status and ensure the component meets the required automotive qualification standards before finalizing procurement orders.

Selection Notes

Select this component when designing RF circuits requiring precise gain control and minimal signal degradation. Ensure the design accommodates the 8 V maximum drain-source voltage and provides adequate thermal management to maintain the junction temperature within the 150 °C limit during operation.

Part Context

This part belongs to the BF2030 series of silicon N-channel MOSFET tetrodes from Infineon Technologies. The series includes variants such as BF2030R and BF2030W, which share identical electrical characteristics but differ in their physical packaging configurations.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided datasheet. Evaluate alternative dual-gate RF MOSFETs based on matching pin configurations, maximum voltage ratings, and equivalent AC characteristics like power gain and noise figure.

FAQ

What is the maximum operating frequency for the BF2030WE6814BTSA1?

The device is designed for applications up to 1 GHz.

How does the gate configuration affect the device's functionality?

The dual-gate structure allows for independent control of gain and bias, facilitating low-noise amplification and wide dynamic range control.

Is the BF2030WE6814BTSA1 suitable for automotive environments?

Yes, the component is qualified according to the AEC-Q101 standard for automotive applications.