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The BF2030WH6814XTSA1 is a silicon N-channel MOSFET tetrode manufactured by Infineon Technologies. It operates with a drain-source voltage of 8 V and a continuous drain current of 40 mA, dissipating up to 200 mW at case temperatures up to 94 °C. The device features a gate 1-source breakdown voltage of 6 V and a typical power gain of 23 dB at 800 MHz. Packaged in the SOT-343 (SOT343) surface-mount format, it supports an operating temperature range from -55 °C to +150 °C.
Verify component authenticity through authorized distribution channels. Confirm package marking matches the specific suffix requirements. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check RoHS compliance status against local regulatory requirements before integration into final assemblies.
Select this component when designing RF front-ends requiring high linearity and low noise figures around 800 MHz. Consider the SOT-343 package dimensions for PCB layout constraints. Evaluate thermal resistance values relative to expected ambient temperatures to ensure power dissipation limits are not exceeded during continuous operation.
This part belongs to the BF2030 series of silicon N-channel MOSFET tetrodes. It shares core electrical characteristics with variants such as BF2030R and BF2030, differing primarily in the physical package type. The series is engineered specifically for radio frequency applications demanding stable performance across wide bandwidths.
Direct substitutes within the same family include BF2030R E6814 and BF2030 W H6814. Verify pinout compatibility between SOT143, SOT143R, and SOT343 packages if replacing with non-tetraode equivalents. Cross-compatibility requires matching drain-source voltage and current ratings.