BF2030WH6824XTMA1

BF2030WH6824XTMA1

  • Description:RF MOSFET 5V SOT343
  • Series:-

SKU:526d29f29f8f Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET 5V SOT343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:800MHz
  • Gain:23dB
  • Voltage - Test:5 V
  • Current Rating (Amps):40mA
  • Noise Figure:1.5dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:8 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Configuration:N-Channel

Download product information

BF2030WH6824XTMA1

Overview

The BF2030WH6824XTMA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It operates at a drain-source voltage of 8 V with a continuous drain current of 40 mA. The device features a typical forward transconductance of 31 mS and a power gain of 23 dB at 800 MHz. It includes an AGC pin for gain control, achieving a range of approximately 50 dB. Packaged in SOT343, it complies with RoHS standards and is qualified according to AEC-Q101.

Feature Summary

  • Tetrode structure optimized for low noise and high gain in RF input stages
  • Integrated AGC pin enabling precise gain control via external biasing
  • Qualified for automotive applications under AEC-Q101 standards

Applications

  • Low noise amplifier (LNA) stages in mobile communication systems
  • High gain controlled input stages operating up to 1 GHz
  • RF signal processing circuits requiring variable gain characteristics

Procurement Notes

Verify the specific suffix WH6824XTMA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and AEC-Q101 qualification requirements relevant to the target application environment before procurement.

Selection Notes

Select this component for designs requiring integrated gain control within a compact SOT343 footprint. Consider the 8 V maximum drain-source voltage and 40 mA continuous current limits when designing bias networks. Evaluate thermal dissipation capabilities relative to the ambient temperature constraints specified in the datasheet.

Part Context

This part belongs to the BF2030 family of silicon N-channel MOSFET tetrodes from Infineon Technologies. The family includes variants such as BF2030, BF2030R, and BF2030W, which differ primarily in packaging formats like SOT143, SOT143R, and SOT343 while maintaining similar electrical performance profiles for RF applications.

Replacement Considerations

No official substitutes are listed in the provided documentation. When evaluating alternatives, ensure compatibility with the 8 V drain-source voltage, 40 mA current rating, and SOT343 package dimensions. Verify that replacement devices meet the required noise figure and gain control range specifications.

BF2030WH6824XTMA1BF2030WH6824XTMA1

Click on the inquiry