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The BF2030WH6824XTMA1 is a silicon N-channel MOSFET tetrode designed for low noise and high gain applications in controlled input stages up to 1 GHz. It operates at a drain-source voltage of 8 V with a continuous drain current of 40 mA. The device features a typical forward transconductance of 31 mS and a power gain of 23 dB at 800 MHz. It includes an AGC pin for gain control, achieving a range of approximately 50 dB. Packaged in SOT343, it complies with RoHS standards and is qualified according to AEC-Q101.
Verify the specific suffix WH6824XTMA1 against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure compliance with RoHS directives and AEC-Q101 qualification requirements relevant to the target application environment before procurement.
Select this component for designs requiring integrated gain control within a compact SOT343 footprint. Consider the 8 V maximum drain-source voltage and 40 mA continuous current limits when designing bias networks. Evaluate thermal dissipation capabilities relative to the ambient temperature constraints specified in the datasheet.
This part belongs to the BF2030 family of silicon N-channel MOSFET tetrodes from Infineon Technologies. The family includes variants such as BF2030, BF2030R, and BF2030W, which differ primarily in packaging formats like SOT143, SOT143R, and SOT343 while maintaining similar electrical performance profiles for RF applications.
No official substitutes are listed in the provided documentation. When evaluating alternatives, ensure compatibility with the 8 V drain-source voltage, 40 mA current rating, and SOT343 package dimensions. Verify that replacement devices meet the required noise figure and gain control range specifications.