SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BF2040RE6814 is an N-channel enhancement-mode RF MOSFET manufactured by Infineon Technologies. It operates at a maximum frequency of 800 MHz with a typical power gain of 23 dB. The device features a drain-source breakdown voltage (Vds) of 8 V and a continuous drain current rating of 40 mA, tested at 5 V. It is housed in a surface-mount SOT-143R package with a maximum power dissipation of 200 mW. The component exhibits a noise figure of 1.6 dB and functions within a temperature range of -55 °C to +150 °C.
Verify the exact suffix configuration when sourcing replacements, as variations like H6814 or HTSA1 may indicate different packaging or tape-and-reel specifications. Confirm end-of-life status with distributors, as this model is listed as discontinued. Ensure compatibility with existing PCB footprints for the SOT-143R package during any design updates or maintenance repairs.
Select this component for low-voltage RF designs requiring high gain in a compact surface-mount form factor. Compare against similar RF MOSFETs if higher current ratings are needed, noting the 40 mA limit. Consider the 8 V Vds rating for circuit protection requirements. Verify that the 200 mW power dissipation aligns with the thermal management capabilities of the target application environment.
This part belongs to the BF2040 series of RF small-signal MOSFETs from Infineon. It shares core electrical characteristics with variants such as BF2040WH6814 and BF2040E6814HTSA1, differing primarily in packaging details and manufacturing lot codes. The series is characterized by silicon technology optimized for high-frequency amplification tasks.
Direct substitutes include BF2040WH6814 and BF2040E6814HTSA1, which share identical electrical parameters. Verify pinout compatibility for the SOT-143R package before substitution. Cross-reference datasheets to confirm matching gain and noise figures for critical RF performance requirements.