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The BF245C is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for VHF and UHF amplifier applications. It features a TO-92 through-hole package with three terminals: Gate, Source, and Drain. Key electrical characteristics include a maximum drain-source voltage of 30V and a gate-source breakdown voltage ranging from -3V to -30V. The device exhibits a zero-gate voltage drain current (IDSS) between 6mA and 25mA at VGS=0V and VDS=15V. Common source forward transconductance (gfs) is specified between 3mmhos and 6.5mmhos at 1KHz. Total device dissipation is rated at 350mW at 25°C ambient temperature.
Verify component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm the part number suffix matches the required electrical binning, as variations exist within the BF245 series. Ensure the package type corresponds to the design requirements before integration into the circuit board assembly process.
Select the BF245C when specific IDSS and gfs ranges are required for VHF/UHF designs. Compare the -7.5V to -3.8V gate-source cut-off voltage against circuit biasing needs. Evaluate thermal derating requirements above 25°C to ensure total device dissipation limits are not exceeded during continuous operation.
The BF245C belongs to the BF245A/BF245B/BF245C family of N-channel JFETs manufactured by Fairchild Semiconductor, now part of onsemi. These devices share similar physical packaging and basic operational principles but differ in specific electrical parameter bins such as cutoff voltage and drain current.
BF245A and BF245C are part of the same family but have different electrical specifications. Verify compatibility with BF245B or BF245A only if their respective parameter ranges meet the circuit requirements.