BF245C,112

Overview

The BF245C is an N-channel silicon field-effect transistor from the BF245 series, housed in a plastic TO-92 variant (SOT54) package. It features interchangeable drain and source connections and supports frequencies up to 700 MHz. Key electrical parameters include a maximum drain-source voltage of ±30 V, a gate-source cut-off voltage range of -0.25 V to -8.0 V, and a typical forward transfer admittance of 6.5 mS at 1 kHz. The device has a total power dissipation rating of 300 mW at 75 °C and a junction temperature limit of 150 °C.

Feature Summary

• Symmetrical design allowing interchangeability of drain and source connections
• Capable of operation at radio frequencies up to 700 MHz
• Low noise figure suitable for sensitive signal amplification

Applications

• LF amplifier circuits
• HF amplifier circuits
• DC amplifier circuits

Procurement Notes

Verify the specific ordering suffix matches the required tape-and-reel or bulk packaging configuration. Confirm that the component status aligns with current production availability rather than obsolete listings. Ensure the datasheet version corresponds to the latest product specification to avoid discrepancies in thermal or electrical limits during final validation.

Selection Notes

Select this component when symmetrical FET topology is required to simplify PCB layout or allow flexible mounting orientations. The BF245C offers higher drain current compared to BF245A and B variants, making it suitable for applications requiring greater signal handling capacity within the same low-power constraints and standard through-hole form factor.

Part Context

This part belongs to the BF245 family of general-purpose N-channel JFETs manufactured by NXP Semiconductors. The series includes BF245A and BF245B variants which differ primarily in their zero-gate-voltage drain current ranges. These transistors are designed for low-noise analog applications where high input impedance and stable performance across varying temperatures are critical requirements.

Replacement Considerations

BF245A, BF245B

FAQ

Can the drain and source terminals be swapped?

Yes, the BF245C is a symmetrical junction field-effect transistor, meaning the drain and source connections are interchangeable.

What is the maximum operating frequency?

The device is rated for frequencies up to 700 MHz.

How does the BF245C differ from the BF245A?

The primary difference is the zero-gate-voltage drain current; the BF245C typically ranges from 12 mA to 25 mA, whereas the BF245A ranges from 2 mA to 6.5 mA.