BF245C_D26Z

Overview

The BF245C_D26Z is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) manufactured by onsemi. Designed for VHF and UHF amplifier applications, this component utilizes silicon technology and is housed in a TO-92 package (Case 29-11). Key electrical characteristics include a drain-source voltage rating of ±30 V, a maximum drain current of 100 mA, and a total device dissipation of 350 mW at 25°C ambient temperature. The device operates within a storage channel temperature range of -65°C to +150°C.

Feature Summary

• Optimized for VHF and UHF frequency band amplification
• N-channel depletion mode operation
• Silicon junction field-effect transistor construction

Applications

• VHF/UHF amplifier circuits
• RF signal processing stages
• Low-noise front-end amplification

Procurement Notes

Verify the specific suffix _D26Z against official onsemi documentation to confirm tape-and-reel packaging specifications and lot traceability requirements. Ensure compliance with RoHS directives and check for any lead-free status variations compared to standard BF245 variants before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring N-channel JFETs for VHF/UHF frequencies. Verify that the 100 mA drain current and 350 mW power dissipation ratings meet the thermal and electrical demands of the specific application environment.

Part Context

This part belongs to the BF245 family of N-channel depletion-mode JFETs from onsemi. It shares core functional characteristics with related parts like the BF245A and BF245B, primarily differing in manufacturing lot codes or specific packaging configurations indicated by the suffix.

Replacement Considerations

Compatible substitutes include the BF245A and BF245B from onsemi, as well as equivalents from other manufacturers such as NXP Semiconductors. Verify pinout compatibility and exact electrical parameter tolerances before substitution.