BF245C_J35Z

BF245C_J35Z

$0.05
  • Description:RF MOSFET JFET TO92-3
  • Series:-

SKU:c1ccb0996b27 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET JFET TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Bulk
  • Technology:JFET
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):25mA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:30 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Configuration:N-Channel

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BF245C_J35Z

Overview

The BF245C_J35Z is an N-channel silicon Junction Field-Effect Transistor (JFET) manufactured by onsemi. It is housed in a TO-92 through-hole package and operates in depletion mode. Key electrical ratings include a drain-source voltage of ±30 V, a gate-source breakdown voltage of -30 V, and a maximum continuous drain current of 100 mA. The device supports a total power dissipation of 350 mW at 25°C ambient temperature, with a thermal derating factor of 2.8 mW/°C above this threshold. The operating junction temperature range extends from -65°C to +150°C.

Feature Summary

  • N-channel silicon construction for RF small signal applications
  • Single configuration within a TO-92 cylindrical plastic package
  • Depletion mode operation suitable for UHF band amplification

Applications

  • UHF band amplifiers
  • VHF/UHF amplifier circuits
  • RF small signal processing

Procurement Notes

Verify the specific suffix J35Z against official datasheets to confirm pinout and marking consistency, as packaging variations may exist. Confirm RoHS compliance status, as some records indicate non-compliance for this specific part number variant. Check current lifecycle status, as availability may be limited due to discontinuation or supply chain adjustments. Ensure the supplier provides valid traceability documentation for the onsemi or Fairchild manufacturing origin.

Selection Notes

Select this component when an N-channel depletion-mode JFET is required for UHF/VHF frequency applications. The TO-92 package suits through-hole designs with moderate power dissipation needs up to 350 mW. Verify that the 100 mA drain current limit meets circuit requirements. Consider the -30 V gate-source breakdown voltage for biasing stability. Compare against BF245A or BF245B if different gain characteristics are needed.

Part Context

The BF245 series comprises N-channel silicon JFETs designed for RF applications. The BF245C variant typically offers specific gain-bandwidth characteristics distinct from the A and B grades. Manufactured by onsemi, formerly Fairchild Semiconductor, these devices are part of a long-standing lineup for VHF and UHF amplification. The J35Z suffix denotes a specific tape-and-reel or bulk packaging format used by distributors.

Replacement Considerations

BF245A: Similar N-channel JFET with potentially different gain groupings. BF245B: Alternative grade within the same series. BF245AZL1: Same family member with TO-92 packaging.

BF245C_J35ZBF245C_J35Z
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