ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET JFET 30V TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：13mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：30 V
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Configuration：N-Channel
Download product information
Overview
The onsemi BF256B_J35Z is an N-channel RF JFET transistor designed for high-frequency applications. It features a TO-92-3 through-hole package and operates with a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. The device supports a continuous drain current of 15 mA and dissipates up to 350 mW of power. It functions within a temperature range of -55°C to +150°C, with a pinch-off voltage between -500 mV and -8 V.
Feature Summary
- N-channel junction field-effect transistor optimized for radio frequency circuits
- Robust thermal performance supporting operation up to 150°C junction temperature
- Standard TO-92-3 through-hole mounting configuration for easy integration
Applications
- RF amplifier stages in communication equipment
- High-frequency signal processing circuits
- Ultra-high frequency band applications
Procurement Notes
Verify the specific ordering suffix _J35Z against official onsemi documentation to confirm packaging and compliance details. Confirm availability status as distribution channels may list obsolete or limited stock items. Ensure the component meets RoHS requirements for the intended market before procurement.
Selection Notes
Select this component when an N-channel RF JFET with 30 V breakdown voltage and 15 mA current capability is required. Consider the TO-92-3 package constraints for PCB layout. Verify that the -500 mV to -8 V pinch-off voltage range aligns with circuit biasing requirements for the specific RF application.
Part Context
The BF256B series belongs to onsemi's portfolio of discrete RF transistors. The BF256B variant is historically associated with Fairchild Semiconductor before its acquisition by onsemi. This component serves as a specialized solution for ultra-high frequency bands, distinct from general-purpose switching transistors.
Replacement Considerations
Check for direct substitutes within the BF256 family or equivalent N-channel RF JFETs from other manufacturers. Ensure pinout compatibility and electrical parameter matching, particularly regarding breakdown voltages and pinch-off ranges, when evaluating alternative components.
