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The BF5020WH6327XTSA1 is a silicon N-channel depletion-mode MOSFET tetrode in the SOT-343 surface-mount package. It operates with a maximum drain-source voltage of 8 V and a continuous drain current of 25 mA, dissipating up to 200 mW at case temperatures up to 94 °C. The device features integrated gate protection diodes and is qualified according to AEC-Q101 standards. At 800 MHz with a 5 V supply and 10 mA drain current, it delivers a typical power gain of 26 dB and a noise figure of 1.2 dB.
Verify component authenticity by checking the manufacturer's marking code against official datasheet layouts. Confirm the specific suffix matches the required SOT-343 package variant. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Cross-reference the ordering number with authorized distributors to confirm current availability status.
Select this component when designing RF front-ends that require depletion-mode operation for biasing simplicity. The SOT-343 package is appropriate for space-constrained PCB layouts. Verify that the 8 V drain-source voltage rating aligns with the system's supply voltage requirements. Consider the thermal resistance characteristics if operating near maximum power dissipation limits.
This part belongs to the BF5020 series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The series includes variants such as BF5020 (SOT-143) and BF5020R (SOT-143R), offering different packaging options while maintaining similar electrical characteristics. The WH6327XTSA1 suffix denotes the specific tape-and-reel packaging configuration for automated assembly.
Direct replacements must match the N-channel depletion-mode tetrode architecture and SOT-343 footprint. Verify that substitute components meet the 8 V VDS rating and comparable noise figure specifications at 800 MHz. Check pinout compatibility, particularly the placement of Gate 1, Gate 2, Drain, and Source terminals.