BF5030WH6327XTSA1

Overview

The BF5030WH6327XTSA1 is a silicon N-channel MOSFET tetrode in an SOT-343 surface-mount package. It features a maximum drain-source voltage of 8 V and a continuous drain current of 25 mA, with total power dissipation rated at 200 mW. The device operates within a temperature range of -55 °C to +150 °C. Electrical characteristics include a forward transconductance of 41 mS and a typical power gain of 34 dB at 800 MHz. Gate-source voltages are limited to ±6 V.

Feature Summary

• Designed for input stages of UHF and VHF tuners with automatic gain control (AGC) functionality
• Supports both 5 V and low-power 3 V operations
• Features integrated ESD gate protection diodes
• Provides very low noise figure and high forward transadmittance

Applications

• Input stages of UHF tuners
• Input stages of VHF tuners
• RF amplifier circuits requiring AGC function

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against the official datasheet pin configuration. Confirm the specific suffix matches the required SOT-343 package variant. Ensure handling precautions are followed due to the electrostatic discharge sensitivity of the device.

Selection Notes

Select this component when designing RF front-ends for broadcast receivers requiring low noise and high linearity. The tetrode structure allows for effective gain control via the second gate terminal. Verify that the 8 V drain-source voltage rating aligns with the circuit supply requirements.

Part Context

This part belongs to the BF5030 series of silicon N-channel MOSFET tetrodes manufactured by Infineon Technologies. The series includes variants such as BF5030 and BF5030R, which differ primarily in their physical packaging configurations while maintaining identical electrical performance specifications.

Replacement Considerations

Direct substitutes within the same series include BF5030 and BF5030R. Cross-compatibility depends on matching the specific package type (SOT-343 vs. SOT-143). Verify pinout alignment before substitution.