BF512,235

Overview

The BF512,235 is an N-channel silicon field-effect transistor manufactured by NXP Semiconductors. It is designed for RF applications with a maximum drain-source voltage of 20V and a continuous drain current rating of 30mA. The device operates at frequencies up to 100MHz and is housed in a TO-236AB (SOT-23) surface-mount package. This component is currently classified as obsolete and no longer in active production.

Feature Summary

• N-channel silicon JFET construction optimized for radio frequency switching and amplification
• Surface-mount SOT-23 packaging for compact circuit board integration
• Rated for 20V drain-source voltage and 30mA continuous current operation

Applications

• RF signal switching circuits
• Low-noise amplifier stages
• Frequency modulation modules

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Verify availability through authorized distributors or secondary markets. Confirm lead times carefully as stock levels are limited. Ensure compatibility with existing PCB footprints before procurement. Request original datasheets to verify pinout and electrical characteristics against legacy designs.

Selection Notes

Select this part only if legacy design compatibility is required. Consider modern equivalents if new product development is underway. Evaluate thermal performance within the SOT-23 package constraints. Verify that the 100MHz frequency limit meets system requirements. Check for RoHS compliance status in available inventory batches.

Part Context

The BF512 series represents NXP's historical lineup of RF JFET transistors. The BF512,235 specifically denotes the tape-and-reel variant of the standard BF512 device. These components were widely used in consumer electronics and communication equipment prior to obsolescence announcements.

Replacement Considerations

BF512