BF545A,215

BF545A,215

  • Description:RF MOSFET JFET 30V SOT23
  • Series:-

SKU:6fd65792fb13 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET JFET 30V SOT23
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:JFET
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):6.5mA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:30 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Configuration:N-Channel

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BF545A,215

Overview

The BF545A,215 is an N-channel symmetrical silicon junction field-effect transistor manufactured by NXP Semiconductors. It is housed in a SOT23 (TO-236AB) plastic surface-mounted package with three leads. The device features a drain-source voltage rating of ±30 V and a total power dissipation of 250 mW at ambient temperatures up to 25 °C. Key electrical characteristics include a gate-source cut-off voltage maximum of -7.8 V and a forward transfer admittance ranging from 3 to 6.5 mS. The component operates within a junction temperature range of -65 °C to +150 °C.

Feature Summary

  • Low leakage level with typical values around 500 fA
  • High gain capability for signal amplification
  • Low cut-off voltage specifically optimized for the BF545A variant

Applications

  • Impedance converters in electret microphones
  • Impedance converters in infra-red detectors
  • VHF amplifiers in oscillators
  • VHF amplifiers in mixers

Procurement Notes

Verify the specific part number BF545A,215 against official NXP documentation to confirm it corresponds to the N-channel JFET variant described. Ensure that the ordering suffix matches the required marking code and manufacturing origin details provided in the datasheet. Confirm compliance with ESD sensitivity handling requirements during transport and assembly processes.

Selection Notes

Select this component when designing circuits requiring low leakage current and high gain characteristics suitable for VHF frequencies. Consider the symmetrical nature of the drain and source terminals which allows for interchangeable placement in certain circuit topologies. Evaluate the thermal resistance and power dissipation limits relative to the expected operating ambient temperature conditions.

Part Context

This device belongs to a family of N-channel silicon junction field-effect transistors that includes the BF545B and BF545C variants. These components share the same SOT23 package and general structural design but differ in their specific electrical parameters such as cut-off voltage and drain current ranges. The BF545A represents the variant with the lowest cut-off voltage specification within this series.

Replacement Considerations

The BF545B and BF545C are documented members of the same product family sharing the SOT23 package. Substitution requires verification that the alternative variant's electrical parameters, particularly cut-off voltage and drain current, meet the specific circuit requirements.

BF545A,215BF545A,215

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