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The BF556A,215 is an N-channel symmetrical silicon junction field-effect transistor housed in a SOT23 plastic surface-mounted package. It features a drain-source voltage rating of ±30 V and a total power dissipation of 250 mW at 25 °C ambient temperature. The device exhibits a forward transfer admittance of 4.5 mS and a gate-source cut-off voltage range from -0.5 V to -7.5 V. Drain current (IDSS) for the BF556A variant ranges between 3 mA and 7 mA under standard test conditions.
Verify the specific ordering suffix matches the required manufacturing origin code. Confirm that the component status aligns with project lifecycle requirements, as availability may vary. Ensure ESD protection protocols are strictly followed during handling due to device sensitivity. Cross-reference the marking code on received units against official documentation to validate authenticity and traceability before integration into production lines.
Select this component when low leakage and high gain are critical for impedance conversion tasks. The BF556A variant is appropriate for applications requiring lower drain current compared to B or C variants. Consider the SOT23 package constraints for thermal management and board space. Evaluate the gate-source cut-off voltage range to ensure compatibility with the intended control circuitry levels.
This part belongs to the BF556 series of N-channel silicon junction field-effect transistors manufactured by NXP Semiconductors. The series includes BF556A, BF556B, and BF556C variants distinguished primarily by their drain current specifications. These devices are designed for general-purpose analog applications requiring symmetrical characteristics and robust performance in small form factors.
Direct substitutes within the same family include BF556B and BF556C, though they differ in drain current ranges. Verify pinout compatibility and package dimensions when considering alternative manufacturers' JFETs. Ensure replacement parts meet the same absolute maximum ratings and thermal resistance specifications.