BF556C,215

Description：RF MOSFET JFET 30V SOT23
Series：-

SKU:67bd876ecc05 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET JFET 30V SOT23
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：JFET
Frequency：-
Gain：-
Voltage - Test：-
Current Rating (Amps)：18mA
Noise Figure：-
Current - Test：-
Power - Output：-
Voltage - Rated：30 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23 (TO-236AB)
Configuration：N-Channel

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BF556C,215

Overview

The BF556C is an N-channel symmetrical silicon junction field-effect transistor housed in a SOT23 plastic surface-mounted package. It features a drain-source voltage rating of ±30 V and a total power dissipation of 250 mW at 25 °C. The device exhibits a forward transfer admittance of at least 4.5 mS at VGS=0V and VDS=15V. Drain current (IDSS) ranges from 11 mA to 18 mA under standard conditions, with a gate-source cut-off voltage between -0.5 V and -7.5 V.

Feature Summary

Low leakage level
High gain
Low cut-off voltage

Applications

Impedance converters in electret microphones
Impedance converters in infrared detectors
VHF amplifiers in oscillators
VHF amplifiers in mixers

Procurement Notes

Verify the specific part marking code '26' on the component body to confirm it is the BF556C variant rather than the BF556A or BF556B. Ensure the ordering suffix matches the required manufacturing origin if specified by the design requirements. Confirm that the ESD sensitivity precautions are strictly followed during handling and transport to prevent damage to the sensitive silicon junction.

Selection Notes

Select this component when designing circuits requiring low input impedance conversion for high-impedance sensors like electret microphones or infrared detectors. The symmetrical structure allows for flexible circuit topology. Consider the thermal resistance of 500 K/W and the need for adequate heat sinking if operating near the maximum power dissipation limit of 250 mW.

Part Context

This device belongs to the BF556 series of N-channel silicon junction field-effect transistors, which also includes the BF556A and BF556B variants. These components are distinguished primarily by their drain current specifications and gate-source cut-off voltage ranges. The series is designed for general-purpose analog applications requiring high gain and low noise characteristics in small surface-mount packages.