BF776H6327XTSA1

Overview

The BF776H6327XTSA1 is an NPN RF bipolar transistor manufactured by Infineon Technologies. It operates with a maximum collector-emitter voltage of 4.7 V and supports a continuous collector current of 50 mA. The device features a transition frequency of 46 GHz, enabling high-frequency performance. Key electrical parameters include a DC current gain (hFE) of at least 180 at 30 mA and 3 V, and a typical noise figure ranging from 0.8 dB to 1.3 dB between 1.8 GHz and 6 GHz. Maximum power dissipation is rated at 200 mW. The component is housed in a PG-SOT343-4 surface-mount package and functions within a junction temperature range up to 150 °C.

Feature Summary

• High-frequency operation capability with a 46 GHz transition frequency suitable for RF applications
• Low noise performance characterized by a noise figure between 0.8 dB and 1.3 dB in the 1.8–6 GHz range
• Compact SOT-343 surface-mount packaging designed for space-constrained circuit layouts

Applications

• RF signal amplification in communication systems
• Low-noise amplifier stages operating in the UHF and microwave bands
• High-frequency switching circuits requiring fast transition speeds

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and tape-and-reel specifications. Ensure that the requested quantity aligns with standard manufacturing reel sizes. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high-speed NPN switching or amplification at frequencies up to 46 GHz. Consider the 4.7 V breakdown voltage limit for low-voltage supply designs. Evaluate the thermal management requirements given the 200 mW power dissipation rating in the small SOT-343 package. Confirm compatibility with the target PCB footprint for the PG-SOT343-4 outline.

Part Context

This part belongs to Infineon's portfolio of silicon-based RF bipolar transistors. It utilizes standard planar technology optimized for high-frequency performance. The device is distinct from power MOSFETs or logic-level switches, serving specifically as a discrete active element for radio frequency signal processing and amplification tasks in electronic assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult official Infineon replacement guides or contact technical support directly for qualified alternatives.