BF799WH6327XTSA1

Overview

The BF799WH6327XTSA1 is an NPN silicon RF bipolar transistor manufactured by Infineon Technologies. It operates at a maximum frequency of 800 MHz with a collector-emitter voltage (VCEO) of 20 V and a collector current of 35 mA. The device features a power dissipation rating of 280 mW and is housed in a surface-mount SOT-323-3 package. It supports an operating temperature range from -55°C to +150°C.

Feature Summary

• Designed for radio frequency applications up to 800 MHz
• Utilizes silicon technology for robust performance
• Available in compact SOT-323-3 surface mount packaging

Applications

• RF amplifier circuits
• General purpose radio frequency signal processing
• Wireless communication modules

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific datasheet revisions prior to integration. Ensure storage conditions meet moisture sensitivity level requirements to maintain reliability during assembly processes.

Selection Notes

Select this component for designs requiring moderate RF gain within the sub-GHz spectrum. Evaluate thermal management capabilities given the 280 mW dissipation limit in the small SOT-323-3 footprint. Compare electrical parameters against system requirements for voltage headroom and current handling capacity.

Part Context

This part belongs to Infineon's portfolio of RF bipolar transistors, specifically engineered for high-frequency analog applications. The suffix indicates specific tape-and-reel packaging configurations suitable for automated surface-mount assembly lines.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.