ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET JFET 25V SOT23
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：15mA
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：25 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23 (TO-236AB)
- Configuration：N-Channel
Download product information
Overview
The BF861B,215 is an N-channel symmetrical junction field effect transistor (JFET) manufactured by NXP Semiconductors. It is housed in a SOT23 plastic surface-mounted package with three leads. The device features a drain-source voltage rating of 25 V and a total power dissipation of 250 mW at 25 °C ambient temperature. For the BF861B variant, the drain current (IDSS) ranges from 6 mA to 15 mA at VGS = 0 V and VDS = 8 V. The forward transfer admittance (|yfs|) is specified between 16 mS and 25 mS under the same conditions. Input capacitance (Ciss) is limited to a maximum of 10 pF, while reverse transfer capacitance (Crss) is typically 2.1 pF and maximally 2.7 pF at 1 MHz.
Feature Summary
- High transfer admittance for effective signal amplification
- Low input and feedback capacitance suitable for high-frequency applications
- Low noise performance characterized by low equivalent input noise voltage
- Integrated electrostatic discharge protection
Applications
- Preamplifiers for AM tuners in car radios
Procurement Notes
Verify the specific ordering code BF861B,215 against the manufacturer's latest documentation to confirm current production status and availability. Ensure that the SOT23 package dimensions align with the printed-circuit board layout requirements. Confirm compliance with relevant environmental directives such as RoHS before finalizing procurement decisions.
Selection Notes
Select the BF861B when a moderate drain current range of 6 mA to 15 mA is required compared to the lower current BF861A or higher current BF861C variants. Consider the device's low noise characteristics and high transfer admittance for sensitive audio preamplifier stages. Verify that the thermal resistance and power dissipation limits are adequate for the intended operating environment.
Part Context
The BF861B belongs to a family of N-channel symmetrical junction FETs produced by NXP Semiconductors. This family includes the BF861A and BF861C, which share identical packaging and general electrical characteristics but differ primarily in their specific drain current and forward transfer admittance ranges. All variants utilize the SOT23 package.
Replacement Considerations
Direct pin-compatible substitutes within the same family include the BF861A and BF861C. Selection depends on matching the specific drain current and transconductance requirements of the circuit design.
FAQ
What is the gate-source cut-off voltage range for the BF861B?
The gate-source cut-off voltage (VGSoff) for the BF861B ranges from -0.5 V to -1.5 V when the drain current is 1 µA.
How does the BF861B differ from the BF861A?
The primary difference lies in the electrical parameters; the BF861B has a higher drain current range (6-15 mA vs. 2-6.5 mA) and a higher forward transfer admittance range (16-25 mS vs. 12-20 mS) compared to the BF861A.
Is the BF861B automotive qualified?
No, unless explicitly stated in the data sheet, this product is not automotive qualified. It is not tested in accordance with automotive testing or application requirements.
