BF904A,215

Overview

The BF904A,215 is an N-channel dual-gate MOS-FET manufactured by NXP Semiconductors. It is designed for VHF band applications and functions as a mixer diode or RF small signal device. The component utilizes silicon technology and is housed in a plastic package with four terminals. Key electrical characteristics include a minimum drain-source breakdown voltage of 7 V and a maximum drain current of 0.03 A. The device exhibits low noise performance and features a maximum feedback capacitance of 0.035 pF. It operates within the ultra-high frequency band and is compliant with RoHS standards.

Feature Summary

• Dual-gate N-channel MOS-FET architecture optimized for VHF band operations
• Low noise performance suitable for sensitive RF applications
• Integrated mixer diode functionality within the silicon structure

Applications

• VHF band mixer circuits
• RF small signal processing
• Ultra-high frequency band applications

Procurement Notes

Verify the specific suffix 215 against official NXP documentation to confirm packaging details and tape-and-reel specifications. Ensure the component matches the N-channel dual-gate MOS-FET description rather than generic single-gate variants. Cross-reference the manufacturer part number with the latest datasheet revision to confirm compliance with current environmental standards and pinout configurations before integration into designs.

Selection Notes

Select this component when designing VHF band circuits requiring dual-gate isolation and low noise characteristics. The device is appropriate for applications needing mixer diode functionality integrated with MOS-FET control. Consider the 7 V breakdown voltage and 30 mA current limits during biasing design. Verify that the plastic package type meets the thermal and mechanical requirements of the target PCB layout.

Part Context

The BF904A belongs to the family of N-channel dual-gate MOS-FETs produced by NXP Semiconductors. These devices are engineered for radio frequency applications, specifically targeting the VHF spectrum. The dual-gate structure provides enhanced isolation and control compared to single-gate alternatives, making them suitable for complex RF signal processing tasks where noise figure and linearity are critical performance factors.

Replacement Considerations

Official substitutes include the BF904 and BF904A without the 215 suffix, provided the package and reel specifications align with system requirements. Other N-channel dual-gate MOS-FETs from the same family may be compatible if electrical parameters such as breakdown voltage and current ratings are verified against the design specifications.