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The BF904AWR,115 is an N-channel dual gate MOS-FET manufactured by NXP Semiconductors. It is designed for VHF band mixer applications and operates in the Ultra High Frequency Band. The device features a plastic package with four pins and utilizes Metal-Oxide Semiconductor technology. Key electrical parameters include a minimum drain-source breakdown voltage of 7 V and a maximum continuous drain current of 0.03 A. The component exhibits low noise characteristics and has a maximum feedback capacitance (Crss) of 0.035 pF. It is RoHS compliant and lead-free.
Verify the specific ordering suffix to confirm packaging details, as variations exist between tape-and-reel and cut-tape formats. Ensure the component matches the required SOT-343R or CMPAK-4 footprint depending on the specific variant sourced. Confirm RoHS compliance status directly from the manufacturer's latest documentation before integration into production designs.
Select this component for applications requiring a dual-gate MOSFET in the VHF spectrum. Consider the 7 V drain-source voltage limit and 30 mA current rating when designing biasing networks. The low feedback capacitance makes it suitable for high-frequency isolation requirements. Verify thermal dissipation capabilities within the specified plastic package constraints.
This component belongs to NXP's portfolio of RF MOSFET transistors. It is part of a family of silicon-based devices intended for radio frequency applications. The BF904 series typically serves as a foundational element in analog front-end designs for communication systems operating in very high frequency ranges.
Public confirmed substitute part numbers are not available in the provided data.