BF904AWR,115

BF904AWR,115

$0.17
  • Description:RF MOSFET 5V CMPAK-4
  • Series:-

SKU:3a5d1030ca26 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 5V CMPAK-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Bulk
  • Technology:MOSFET (Metal Oxide)
  • Frequency:200MHz
  • Gain:-
  • Voltage - Test:5 V
  • Current Rating (Amps):30mA
  • Noise Figure:1dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:7 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:CMPAK-4
  • Configuration:N-Channel Dual Gate

Download product information

BF904AWR,115

Overview

The BF904AWR,115 is an N-channel dual gate MOS-FET manufactured by NXP Semiconductors. It is designed for VHF band mixer applications and operates in the Ultra High Frequency Band. The device features a plastic package with four pins and utilizes Metal-Oxide Semiconductor technology. Key electrical parameters include a minimum drain-source breakdown voltage of 7 V and a maximum continuous drain current of 0.03 A. The component exhibits low noise characteristics and has a maximum feedback capacitance (Crss) of 0.035 pF. It is RoHS compliant and lead-free.

Feature Summary

  • Dual gate configuration optimized for RF mixing functions
  • Low noise performance suitable for sensitive signal processing
  • N-channel enhancement mode operation

Applications

  • VHF band mixer circuits
  • Ultra high frequency signal processing
  • RF small signal amplification

Procurement Notes

Verify the specific ordering suffix to confirm packaging details, as variations exist between tape-and-reel and cut-tape formats. Ensure the component matches the required SOT-343R or CMPAK-4 footprint depending on the specific variant sourced. Confirm RoHS compliance status directly from the manufacturer's latest documentation before integration into production designs.

Selection Notes

Select this component for applications requiring a dual-gate MOSFET in the VHF spectrum. Consider the 7 V drain-source voltage limit and 30 mA current rating when designing biasing networks. The low feedback capacitance makes it suitable for high-frequency isolation requirements. Verify thermal dissipation capabilities within the specified plastic package constraints.

Part Context

This component belongs to NXP's portfolio of RF MOSFET transistors. It is part of a family of silicon-based devices intended for radio frequency applications. The BF904 series typically serves as a foundational element in analog front-end designs for communication systems operating in very high frequency ranges.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data.

BF904AWR,115BF904AWR,115
$0.17
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