BF908R,215

Overview

The BF908R,215 is a depletion-type dual-gate MOS-FET manufactured by NXP Semiconductors. It operates with a maximum drain-source voltage of 12 V and a drain current of 40 mA. The device features a forward transfer admittance ranging from 36 to 50 mS at 1 MHz. Input capacitance at gate 1 is typically 3.1 pF, while reverse transfer capacitance is typically 30 pF. Noise figure performance is specified as 1.5 dB typical at 800 MHz. Total power dissipation is rated at 200 mW, with an operating junction temperature limit of 150 °C.

Feature Summary

• Dual-gate architecture designed for low-noise gain-controlled amplifier applications up to 1 GHz.
• Integrated back-to-back diodes between gates and source provide protection against excessive input voltage surges.
• Short-channel transistor structure ensures a high ratio of forward transfer admittance to input capacitance.

Applications

• Television tuners
• Professional communications equipment

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring a dual-gate MOS-FET in a SOT-143R package. Ensure the application utilizes a 12 V supply voltage compatible with the device's absolute maximum ratings. Consider the thermal resistance characteristics when designing heat dissipation strategies for the plastic microminiature package.

Part Context

This part belongs to the BF908 series of dual-gate MOS-FETs produced by NXP Semiconductors. The BF908R variant specifically denotes the SOT-143R plastic microminiature package configuration. These devices are engineered for RF front-end stages where low noise and high linearity are critical requirements.

Replacement Considerations

Consult official documentation for confirmed substitute part numbers.

FAQ

What is the function of the integrated diodes in the BF908R?

The integrated back-to-back diodes between the gates and the source protect the device against excessive input voltage surges during operation or handling.

How does the BF908R handle static discharge?

The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling to prevent damage.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) for the BF908R is 150 °C.