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The BF908R,235 is a dual-gate depletion-type MOSFET designed for high-frequency RF applications in the VHF and UHF bands. It operates with a maximum drain-source voltage of 12V and a continuous drain current of 40mA, dissipating up to 200mW of power. The device is housed in a plastic microminiature SOT-143R package, providing protection against excessive static discharge. It is primarily utilized in television tuners and professional communication equipment requiring stable high-frequency performance.
Verify component authenticity through authorized NXP distributors or certified supply chain partners. Confirm the specific suffix (235) matches the required reel packaging configuration. Request official datasheets and material declarations to ensure compliance with RoHS standards. Validate part markings against the manufacturer's latest product status information before integration into production designs.
Select this component when designing circuits requiring dual-gate control for high-frequency signal mixing or amplification. Ensure the operating environment stays within the specified 12V drain-source voltage and 40mA current limits. Consider the SOT-143R footprint constraints during PCB layout. Verify thermal management capabilities for the 200mW power dissipation requirement in the final assembly.
The BF908R belongs to NXP's series of dual-gate MOS-FETs engineered for RF front-end applications. It shares architectural similarities with the BF908 but differs in packaging format. This component represents a legacy solution for VHF/UHF tuning systems, often replaced by newer integrated RF ICs in modern consumer electronics while remaining relevant for specialized professional hardware.
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult NXP Semiconductors directly for current equivalent recommendations or updated product line alternatives that meet identical electrical specifications and pinout configurations.