BF908R,235

BF908R,235

  • Description:RF MOSFET 8V SOT143R
  • Series:-

SKU:7ce2569b7377 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 8V SOT143R
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:200MHz
  • Gain:-
  • Voltage - Test:8 V
  • Current Rating (Amps):40mA
  • Noise Figure:0.6dB
  • Current - Test:15 mA
  • Power - Output:-
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-143R
  • Supplier Device Package:SOT-143R
  • Configuration:N-Channel Dual Gate

Download product information

BF908R,235

Overview

The BF908R,235 is a dual-gate depletion-type MOSFET designed for high-frequency RF applications in the VHF and UHF bands. It operates with a maximum drain-source voltage of 12V and a continuous drain current of 40mA, dissipating up to 200mW of power. The device is housed in a plastic microminiature SOT-143R package, providing protection against excessive static discharge. It is primarily utilized in television tuners and professional communication equipment requiring stable high-frequency performance.

Feature Summary

  • Dual-gate architecture optimized for high-frequency signal processing
  • Depletion-mode operation suitable for RF mixer and amplifier circuits
  • Integrated electrostatic discharge protection within the SOT-143R package

Applications

  • VHF and UHF television tuner circuits
  • Professional radio frequency communication equipment
  • High-frequency RF mixer stages

Procurement Notes

Verify component authenticity through authorized NXP distributors or certified supply chain partners. Confirm the specific suffix (235) matches the required reel packaging configuration. Request official datasheets and material declarations to ensure compliance with RoHS standards. Validate part markings against the manufacturer's latest product status information before integration into production designs.

Selection Notes

Select this component when designing circuits requiring dual-gate control for high-frequency signal mixing or amplification. Ensure the operating environment stays within the specified 12V drain-source voltage and 40mA current limits. Consider the SOT-143R footprint constraints during PCB layout. Verify thermal management capabilities for the 200mW power dissipation requirement in the final assembly.

Part Context

The BF908R belongs to NXP's series of dual-gate MOS-FETs engineered for RF front-end applications. It shares architectural similarities with the BF908 but differs in packaging format. This component represents a legacy solution for VHF/UHF tuning systems, often replaced by newer integrated RF ICs in modern consumer electronics while remaining relevant for specialized professional hardware.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult NXP Semiconductors directly for current equivalent recommendations or updated product line alternatives that meet identical electrical specifications and pinout configurations.

BF908R,235BF908R,235

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