BF909R,235

Overview

The BF909R,235 is an N-channel RF MOSFET manufactured by NXP Semiconductors. It features a dual-gate structure housed in a SOT-143R surface-mount package with three active pins and one tab. The device is rated for a drain-source voltage of 8V and supports a continuous drain current of 15mA. Designed for radio frequency applications, it operates effectively up to a frequency of 200MHz. The component is supplied in tape and reel packaging for automated assembly processes.

Feature Summary

• Dual-gate architecture enabling enhanced control and isolation for RF signal processing
• N-channel configuration optimized for low-voltage high-frequency switching operations
• Compact SOT-143R surface-mount footprint suitable for space-constrained PCB layouts

Applications

• RF amplifier stages in communication equipment
• Signal mixing and modulation circuits
• High-frequency switching applications within consumer electronics

Procurement Notes

Verify the specific ordering code suffix to ensure correct packaging configuration. Confirm that the requested quantity aligns with the manufacturer's standard tape and reel specifications. Check for regional availability restrictions or compliance certifications required for your target market before finalizing procurement orders.

Selection Notes

Select this component when a dual-gate RF MOSFET is required for frequencies up to 200MHz. Ensure the system design accommodates the 8V maximum drain-source voltage rating. Consider the SOT-143R package dimensions for thermal management and board space allocation compared to alternative single-gate devices.

Part Context

This part belongs to NXP's portfolio of discrete RF transistors designed for analog and mixed-signal applications. It complements other small-signal components used in wireless infrastructure and portable devices requiring efficient RF signal handling within compact form factors.

Replacement Considerations

Consult official NXP documentation for qualified substitute part numbers. Verify pin compatibility and electrical characteristics against potential alternatives before implementation.