BF909WR,135

Overview

The BF909WR,135 is an N-channel dual-gate MOSFET transistor manufactured by NXP Semiconductors. It is housed in a plastic microminiature SOT-143R package with four surface-mount terminals. The device integrates an amplifier MOS-FET with interconnected source and substrate alongside an internal bias circuit. This configuration ensures superior cross-modulation performance during automatic gain control (AGC) operations. The component is designed for enhancement-type field-effect applications requiring high forward transfer admittance.

Feature Summary

• Dual-gate architecture with integrated internal bias circuit for enhanced linearity
• Optimized for low noise gain-controlled amplifier functionality up to 1 GHz
• Superior cross-modulation performance during automatic gain control cycles
• Designed specifically for operation at 5 V supply voltage

Applications

• VHF and UHF television tuners
• Professional communications equipment
• Low noise gain-controlled amplifier stages

Procurement Notes

Verify the specific suffix '135' against official NXP documentation to confirm reel packaging specifications and tape dimensions. Confirm RoHS compliance status through the manufacturer's current datasheet revision. Check for obsolescence notices as this component family may have lifecycle restrictions. Ensure the SOT-143R footprint matches the target PCB design constraints before procurement.

Selection Notes

Select this component for designs requiring dual-gate isolation and high linearity in RF front-end stages. The internal bias circuit simplifies schematic complexity compared to discrete biasing solutions. Verify that the operating frequency range aligns with the device's specified bandwidth limits. Consider the 5 V supply voltage requirement when designing power rails for the application circuit.

Part Context

This part belongs to the BF909 series of N-channel dual-gate MOS-FETs from NXP Semiconductors. The series is characterized by short-channel technology providing a high ratio of forward transfer admittance to input capacitance. These devices are engineered for microwave and radio frequency applications where signal integrity and low distortion are critical requirements.

Replacement Considerations

Official substitutes include BF909A, BF909AR, and BF909AWR variants within the same product family. Verify pinout compatibility and electrical parameter tolerances before substitution. Cross-reference package dimensions to ensure mechanical fit in existing assemblies.