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The BF996S,215 is a depletion-type N-channel dual-gate MOS-FET in a SOT143 microminiature package with interconnected source and substrate. It features integrated back-to-back diodes between gates and source to protect against excessive input voltage surges. The device is designed for RF applications requiring high transconductance and low noise figure.
Verify the exact suffix and manufacturer origin when sourcing. Confirm the component matches the specified SOT143 package and depletion mode characteristics. Ensure the part meets the required RF performance specifications for the intended application environment.
Select this component for RF front-end designs requiring dual-gate isolation and surge protection. The integrated diodes simplify circuit design by handling input voltage spikes without external components. Consider the SOT143 footprint for space-constrained PCB layouts.
This discrete RF transistor belongs to NXP's portfolio of passive and active components for radio frequency signal processing. It serves as an input stage device where high transconductance and low noise are critical for signal integrity in UHF bands.
Cross-reference with other N-channel dual-gate depletion MOSFETs in SOT143 packages. Verify pinout compatibility and electrical parameters such as transconductance and breakdown voltage before substitution.