BF998,215

BF998,215

  • Description:RF MOSFET 8V SOT143B
  • Series:-

SKU:89e6290de3dd Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 8V SOT143B
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:200MHz
  • Gain:-
  • Voltage - Test:8 V
  • Current Rating (Amps):30mA
  • Noise Figure:0.6dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-253-4, TO-253AA
  • Supplier Device Package:SOT-143B
  • Configuration:N-Channel Dual Gate

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BF998,215

Overview

The BF998,215 is an N-channel RF FET from NXP USA Inc., packaged in a surface-mount SOT-143B (SOT-143) housing with four pins. It features a maximum drain-source voltage of 12 V and a continuous drain current of 30 mA. The device has a power dissipation rating of 200 mW and operates within a temperature range of -65 °C to +150 °C. Key electrical parameters include a gate-source threshold voltage of 2 V. The component complies with RoHS standards and contains no lead or SVHC substances.

Feature Summary

  • Designed for radio frequency applications as an N-channel field-effect transistor
  • Utilizes a compact SOT-143B surface-mount package for efficient board space utilization
  • Capable of operating at elevated temperatures up to 150 °C

Applications

  • RF signal processing circuits
  • Radio frequency amplification stages
  • High-frequency switching applications

Procurement Notes

Verify the specific ordering code BF998,215 against official NXP documentation to confirm availability status. Ensure that the SOT-143B package variant matches the design requirements. Confirm compliance with environmental directives such as RoHS and REACH through the manufacturer's latest datasheet before finalizing procurement decisions.

Selection Notes

Select this component when designing RF circuits requiring an N-channel FET with a 12 V drain-source voltage limit. Consider the 200 mW power dissipation capability and the -65 °C to +150 °C operating temperature range for environmental suitability. The SOT-143B package is suitable for surface-mount assembly processes requiring compact form factors.

Part Context

The BF998 belongs to NXP's portfolio of discrete semiconductor devices, specifically categorized under radio frequency field-effect transistors. This family of components is engineered for high-frequency performance and reliability in communication systems. The BF998,215 designation indicates a specific tape-and-reel packaging configuration for automated manufacturing integration.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Verify compatibility with alternative RF FETs by comparing pin configurations, voltage ratings, and package dimensions directly with NXP engineering specifications.

BF998,215BF998,215

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