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The BF998,215 is an N-channel RF FET from NXP USA Inc., packaged in a surface-mount SOT-143B (SOT-143) housing with four pins. It features a maximum drain-source voltage of 12 V and a continuous drain current of 30 mA. The device has a power dissipation rating of 200 mW and operates within a temperature range of -65 °C to +150 °C. Key electrical parameters include a gate-source threshold voltage of 2 V. The component complies with RoHS standards and contains no lead or SVHC substances.
Verify the specific ordering code BF998,215 against official NXP documentation to confirm availability status. Ensure that the SOT-143B package variant matches the design requirements. Confirm compliance with environmental directives such as RoHS and REACH through the manufacturer's latest datasheet before finalizing procurement decisions.
Select this component when designing RF circuits requiring an N-channel FET with a 12 V drain-source voltage limit. Consider the 200 mW power dissipation capability and the -65 °C to +150 °C operating temperature range for environmental suitability. The SOT-143B package is suitable for surface-mount assembly processes requiring compact form factors.
The BF998 belongs to NXP's portfolio of discrete semiconductor devices, specifically categorized under radio frequency field-effect transistors. This family of components is engineered for high-frequency performance and reliability in communication systems. The BF998,215 designation indicates a specific tape-and-reel packaging configuration for automated manufacturing integration.
Publicly confirmed substitute part numbers are not available in the provided reference data. Verify compatibility with alternative RF FETs by comparing pin configurations, voltage ratings, and package dimensions directly with NXP engineering specifications.