BF998,235

Overview

The BF998,235 is an N-channel RF small signal MOSFET designed for UHF band applications. It features a dual-gate structure housed in a surface-mount SOT-143B package with four pins. Key electrical parameters include a maximum drain-source voltage of 12 V and a continuous drain current of 30 mA. The device supports a power dissipation of 200 mW and operates within a temperature range of -65 °C to +150 °C. It is RoHS compliant and lead-free.

Feature Summary

• Dual-gate architecture optimized for high selectivity and low noise in RF circuits
• Silicon N-channel construction suitable for UHF frequency operations
• Compact SOT-143B surface-mount packaging for efficient board space utilization

Applications

• UHF band radio receivers
• RF mixer stages
• Low-noise amplifier (LNA) inputs

Procurement Notes

Verify the ordering code suffix matches the required tape-and-reel quantity configuration. Confirm that the component meets specific REACH SVHC standards relevant to the target market regulations. Ensure compatibility with standard SOT-143B footprint designs during procurement planning.

Selection Notes

Select this component for designs requiring a compact, dual-gate RF transistor with moderate voltage handling capabilities. Consider the 12 V breakdown limit and 200 mW thermal dissipation when designing heat management strategies. Verify gate biasing requirements align with the intended UHF application circuit topology.

Part Context

This part belongs to the BF998 series of RF MOSFETs manufactured by NXP Semiconductors. It is functionally equivalent to variants produced under previous corporate names such as Philips Semiconductors or Infineon Technologies. The device serves as a standard solution for discrete RF front-end modules in communication equipment.

Replacement Considerations

Cross-reference with BF998 W or BF998 TRL13 for potential pin-compatible alternatives. Verify manufacturer-specific parameter tolerances before substitution.