BF998RE6327HTSA1

BF998RE6327HTSA1

  • Description:RF MOSFET 8V SOT143R
  • Series:-

SKU:e82a5cd9b8c7 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET 8V SOT143R
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Frequency:45MHz
  • Gain:28dB
  • Voltage - Test:8 V
  • Current Rating (Amps):30mA
  • Noise Figure:2.8dB
  • Current - Test:10 mA
  • Power - Output:-
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-143R
  • Supplier Device Package:PG-SOT-143R-3D
  • Configuration:N-Channel

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BF998RE6327HTSA1

Overview

The BF998RE6327HTSA1 is an N-channel RF MOSFET transistor manufactured by Infineon Technologies. It operates with a drain-source breakdown voltage of 12 V and supports a continuous drain current of 30 mA. The device is designed for high-frequency applications, functioning up to 1 GHz with a typical gain of 28 dB. It features a power dissipation rating of 200 mW and utilizes an SOT-143 surface-mount package. The component is qualified under the AEC-Q100 standard, ensuring suitability for automotive environments across an operating temperature range from -55 °C to +150 °C.

Feature Summary

  • High-frequency operation capability up to 1 GHz
  • Automotive qualification compliant with AEC-Q100 standards
  • Wide operational temperature range suitable for harsh environments

Applications

  • RF signal amplification in communication systems
  • Automotive electronic circuits requiring small-signal RF performance
  • Low-voltage radio frequency switching applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific suffix matches the required automotive grade specifications. Check for end-of-life status or obsolescence notices prior to finalizing procurement decisions. Ensure compliance with RoHS directives and relevant environmental regulations applicable to the target market.

Selection Notes

Select this component when a low-voltage N-channel RF MOSFET with automotive reliability is required. Compare the 12 V breakdown voltage and 30 mA current limits against circuit requirements. Evaluate the SOT-143 footprint compatibility during PCB layout. Consider the 28 dB gain characteristic for signal chain design needs.

Part Context

This part belongs to the BF998 series of RF MOSFETs from Infineon Technologies. It shares the core electrical characteristics of the BF998 family but includes specific packaging and ordering suffixes indicating tape-and-reel delivery and automotive qualification. It serves as a specialized discrete semiconductor solution for radio frequency applications within the broader portfolio of Infineon's RF components.

Replacement Considerations

Direct substitutes may include other parts within the BF998 series if pinout and electrical parameters align. Verify equivalent gain, voltage ratings, and package dimensions before substitution. Consult official replacement guides for cross-reference data.

BF998RE6327HTSA1BF998RE6327HTSA1

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