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The BF998RE6327HTSA1 is an N-channel RF MOSFET transistor manufactured by Infineon Technologies. It operates with a drain-source breakdown voltage of 12 V and supports a continuous drain current of 30 mA. The device is designed for high-frequency applications, functioning up to 1 GHz with a typical gain of 28 dB. It features a power dissipation rating of 200 mW and utilizes an SOT-143 surface-mount package. The component is qualified under the AEC-Q100 standard, ensuring suitability for automotive environments across an operating temperature range from -55 °C to +150 °C.
Verify component authenticity through authorized distribution channels. Confirm that the specific suffix matches the required automotive grade specifications. Check for end-of-life status or obsolescence notices prior to finalizing procurement decisions. Ensure compliance with RoHS directives and relevant environmental regulations applicable to the target market.
Select this component when a low-voltage N-channel RF MOSFET with automotive reliability is required. Compare the 12 V breakdown voltage and 30 mA current limits against circuit requirements. Evaluate the SOT-143 footprint compatibility during PCB layout. Consider the 28 dB gain characteristic for signal chain design needs.
This part belongs to the BF998 series of RF MOSFETs from Infineon Technologies. It shares the core electrical characteristics of the BF998 family but includes specific packaging and ordering suffixes indicating tape-and-reel delivery and automotive qualification. It serves as a specialized discrete semiconductor solution for radio frequency applications within the broader portfolio of Infineon's RF components.
Direct substitutes may include other parts within the BF998 series if pinout and electrical parameters align. Verify equivalent gain, voltage ratings, and package dimensions before substitution. Consult official replacement guides for cross-reference data.