BF998WR,115

Overview

The BF998WR,115 is an N-channel RF FET from NXP Semiconductors housed in a surface-mount SOT-143B package. It features a maximum drain-source voltage of 12 V and a continuous drain current of 30 mA. The device has a power dissipation rating of 200 mW and operates within a temperature range of -65 °C to 150 °C. It complies with RoHS standards and contains no SVHC.

Feature Summary

• Designed for radio frequency applications as an N-channel field-effect transistor
• Utilizes a compact SOT-143B surface-mount package for efficient board space usage

Applications

• Radio frequency signal processing circuits
• RF amplification stages
• Wireless communication devices

Procurement Notes

Verify the specific ordering code BF998WR,115 against official NXP documentation to confirm availability status. Ensure compatibility with SOT-143B footprint requirements during design integration. Confirm that the component meets all necessary environmental compliance standards for the intended deployment region.

Selection Notes

Select this component when a small-form-factor N-channel RF FET is required for low-voltage applications. Consider its 12 V breakdown voltage and 30 mA current limits for circuit design constraints. Evaluate thermal management needs given the 200 mW dissipation capability in the specified package.

Part Context

This part belongs to the NXP RF FET portfolio, specifically utilizing the SOT-143B surface-mount technology. It serves as a discrete semiconductor solution for high-frequency signal handling within compact electronic assemblies, distinct from integrated power management or logic ICs.

Replacement Considerations

Cross-reference with other N-channel RF FETs in the SOT-143B package. Verify pinout compatibility and electrical parameter equivalence before substitution.