BF999E6433HTMA1

Overview

The BF999E6433HTMA1 is an RF MOSFET transistor manufactured by Infineon Technologies. It is a silicon N-channel device designed for small signal applications in the radio frequency spectrum. The component operates with a drain-source breakdown voltage of 20 V and supports a continuous drain current of 30 mA. It functions effectively at frequencies up to 300 MHz, providing a gain of 27 dB. The gate-source voltage rating is +6.5 V, with a maximum power dissipation of 200 mW. It is housed in a surface-mount SOT-23 package and operates within a temperature range of -55°C to +150°C.

Feature Summary

• N-channel silicon construction optimized for RF small signal amplification
• High gain performance suitable for radio frequency circuit applications
• Surface-mount SOT-23 packaging for compact board integration

Applications

• Radio frequency amplification circuits
• Small signal RF processing systems
• Wireless communication equipment front-ends

Procurement Notes

This component is classified as obsolete or end-of-life by the manufacturer. Availability is restricted to existing stock held by authorized distributors or secondary market suppliers. Buyers should verify part authenticity and storage conditions carefully due to the discontinued status. Standard procurement channels may not offer direct new production supply.

Selection Notes

Engineers selecting this part should consider its specific RF characteristics, including the 27 dB gain and 20 V breakdown voltage. The SOT-23 package limits thermal dissipation capabilities compared to larger packages. Designers must ensure the operating frequency remains within the specified 300 MHz limit and that gate-source voltage does not exceed +6.5 V to prevent device damage.

Part Context

The BF999 series represents Infineon's portfolio of RF MOSFET transistors. The E6433 suffix indicates specific tape-and-reel packaging and manufacturing lot details. This particular variant is a legacy silicon-based component, distinct from newer gallium nitride or advanced silicon technologies currently offered by the manufacturer.

Replacement Considerations

No official direct substitutes are listed in public documentation. Engineers should evaluate other N-channel RF MOSFETs with similar gain and voltage ratings. Cross-compatibility requires verification of pinout, package dimensions, and RF performance curves against the original design requirements.