BFG 196 E6327

$0.23

Description：RF TRANS NPN 12V 7.5GHZ SOT223-4
Series：-

SKU:6fc3c4a61f9c Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 12V 7.5GHZ SOT223-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：12V
Frequency - Transition：7.5GHz
Noise Figure (dB Typ @ f)：1.3dB ~ 2.3dB @ 900MHz ~ 1.8GHz
Gain：9dB ~ 14.5dB
Power - Max：800mW
DC Current Gain (hFE) (Min) @ Ic, Vce：70 @ 50mA, 8V
Current - Collector (Ic) (Max)：150mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Supplier Device Package：PG-SOT223-4
Grade：-
Qualification：-

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BFG 196 E6327

Overview

The BFG 196 E6327 is an NPN silicon RF transistor designed for low noise and low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. It operates at collector currents from 20 mA to 80 mA and serves as a power amplifier for DECT and PCN systems. Key electrical parameters include a transition frequency (fT) of 7.5 GHz, a maximum collector-emitter voltage (VCEO) of 12 V, and a total power dissipation of 800 mW. The device features a minimum DC current gain (hFE) of 70 and a typical noise figure of 1.3 dB at 900 MHz.

Feature Summary

Optimized for low noise and low distortion performance in broadband applications
Suitable for use as a power amplifier in DECT and PCN systems
Qualified according to AEC Q101 automotive standards

Applications

Low noise, low distortion broadband amplifiers in antenna systems
Telecommunications systems operating up to 1.5 GHz
Power amplifiers for DECT systems
Power amplifiers for PCN systems

Procurement Notes

Verify the component status before procurement as it may be subject to discontinuation. Confirm that the SOT223 package variant matches the design requirements. Ensure handling precautions are observed due to electrostatic discharge sensitivity. Check for specific Pb-free compliance documentation if required by local regulations.

Selection Notes

Select this component when designing circuits requiring high transition frequency and low noise figures around 900 MHz. Consider the 800 mW power dissipation limit and thermal resistance characteristics for heat management. Verify compatibility with 50 Ohm system impedance for transducer gain calculations.

Part Context

This part belongs to the BFG196 series of NPN silicon RF transistors manufactured by Infineon Technologies. It shares the core specifications of the BFG196 family but includes the E6327 ordering suffix indicating specific packaging or tape-and-reel configuration details.