BFG198,115

Description：RF TRANS NPN 10V 8GHZ SC-73
Series：-

SKU:78bded654e79 Category: Bipolar RF Transistors Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 10V 8GHZ SC-73
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：10V
Frequency - Transition：8GHz
Noise Figure (dB Typ @ f)：-
Gain：-
Power - Max：1W
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 50mA, 5V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：175°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Supplier Device Package：SC-73
Grade：-
Qualification：-

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BFG198,115

Overview

The BFG198,115 is an NPN planar epitaxial silicon transistor housed in a plastic SOT223 (SC-73) surface-mount package. Designed for wideband amplifier applications, it features high gain and excellent output voltage capabilities. Key electrical parameters include a collector-base voltage of 20 V, a collector-emitter voltage of 10 V, and a maximum DC collector current of 100 mA. The device exhibits a transition frequency of 8 GHz at 50 mA and 8 V, with a total power dissipation rating of 1 W up to a soldering point temperature of 135 °C.

Feature Summary

NPN planar epitaxial structure optimized for wideband amplifier applications
High unilateral power gain characteristics across UHF frequencies
Excellent output voltage performance with low intermodulation distortion
Plastic SOT223 envelope providing increased heatsink capability

Applications

Wideband RF amplification circuits
UHF band signal processing systems
Intermodulation distortion testing setups

Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details. Ensure compliance with RoHS directives as indicated in the product specification. Confirm that the component meets the required thermal management standards for the intended application environment before finalizing procurement orders.

Selection Notes

Select this component when designing wideband amplifiers requiring high gain and low distortion at UHF frequencies. Consider the 1 W power dissipation limit and the necessity of maintaining the collector tab temperature below 135 °C during operation. Evaluate the SOT223 package suitability for the available PCB real estate and thermal constraints.

Part Context

This part belongs to the NXP discrete semiconductor transistor portfolio, specifically engineered for radio frequency applications. It represents a standard solution for wideband amplification tasks where high linearity and gain are critical requirements within the ultra-high frequency spectrum.