BFG67/X,215

Overview

The BFG67/X,215 is an NPN silicon wideband transistor manufactured by NXP Semiconductors. It is housed in a 4-pin SOT-143B plastic package with cross emitter pinning. The device features gold metallization for reliability and is designed for high power gain, low noise figure, and high transition frequency applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 15 V, a continuous collector current of 120 mA, and a maximum power dissipation of 400 mW. The transition frequency (fT) reaches 8 GHz, making it suitable for RF circuits operating in the GHz range.

Feature Summary

• Gold metallization ensures excellent long-term reliability
• Cross emitter pinning configuration for flexible PCB layout
• High power gain and low noise figure characteristics

Applications

• Wideband applications in the GHz range
• Satellite TV tuners
• Portable RF communications equipment

Procurement Notes

Verify the specific suffix

Selection Notes

Select this component when a wideband NPN transistor with 8 GHz transition frequency is required. Ensure the design accommodates the SOT-143B package dimensions and the 400 mW thermal dissipation limit. Verify that the cross-pinning configuration matches the existing board footprint or schematic symbol.

Part Context

This part belongs to the BFG series of NPN silicon wideband transistors from NXP Semiconductors. The 'X' designation indicates cross emitter pinning, distinguishing it from the standard inline version. These devices are engineered for high-frequency analog and RF signal processing tasks where low noise and high gain are critical performance factors.

Replacement Considerations

Direct replacements may include the BFG67 without the XR suffix if pin compatibility allows, or other NXP wideband transistors like the BFG93A for lower frequency requirements. Always verify pinout and electrical specifications against the original datasheet before substitution.