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The BFG92A/X,215 is an NPN silicon small-signal transistor manufactured by NXP Semiconductors. It is housed in a SOT23 (TO-236AB) surface-mount package with three terminals. The device supports a maximum collector current of 0.05 A and a collector-emitter voltage of 300 V. Key electrical characteristics include a DC current gain (hFE) ranging from 80 to 160 at a collector current of 2 mA, and a transition frequency (fT) of 4 GHz measured at 100 MHz and 10 mA. The component operates within a junction temperature range of -55 °C to +150 °C and complies with RoHS standards.
Verify the specific suffix designation when ordering, as it indicates the tape-and-reel packaging configuration required for surface-mount processing. Confirm that the requested quantity aligns with standard reel sizes provided by authorized distributors. Ensure compliance with the specified RoHS directive requirements for the target application environment.
Select this component for designs requiring high-frequency operation up to 4 GHz with moderate power handling. The 300 V collector-emitter voltage rating provides significant headroom for high-voltage signal paths. Consider the SOT23 package constraints regarding thermal dissipation and board space when integrating into dense PCB layouts.
This transistor belongs to NXP's portfolio of high-frequency silicon NPN devices designed for RF and microwave applications. It serves as a discrete solution for amplification tasks where integrated circuits may lack the necessary voltage or frequency specifications. The part is widely utilized in telecommunications infrastructure and consumer electronics requiring reliable small-signal processing.
Consult official cross-reference lists for verified equivalents such as the BFQ92A series. Ensure any substitute matches the SOT23 footprint, pinout configuration, and critical electrical parameters including fT and BVceo before implementation.