BFP196E6327HTSA1

Overview

The BFP196E6327HTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It operates in the SOT143 package with four pins, where pin configuration identifies collector, emitter, and base terminals. The device supports a maximum collector-emitter voltage of 12 V and a continuous collector current of 150 mA. Key electrical parameters include a transition frequency (fT) of 7.5 GHz at 500 MHz test conditions, a minimum noise figure (NFmin) of 1.3 dB at 900 MHz, and a total power dissipation capability of 700 mW. DC current gain ranges from 70 to 140 under specified biasing.

Feature Summary

• Designed for low noise and low distortion broadband amplification in antenna and telecommunications systems up to 1.5 GHz
• Suitable for power amplifier applications in DECT and PCN systems
• Features high transition frequency and minimal noise figure for efficient signal processing

Applications

• Low noise, low distortion broadband amplifiers in antenna systems
• Telecommunications systems operating up to 1.5 GHz
• Power amplifiers for DECT and PCN systems

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance and AEC-Q101 qualification status prior to integration. Ensure proper ESD handling precautions are observed during storage and assembly processes to prevent damage to the sensitive semiconductor junctions.

Selection Notes

Select this component when designing circuits requiring low noise performance and high linearity for frequencies up to 1.5 GHz. Consider the 700 mW power dissipation limit and thermal resistance characteristics for adequate heat management. Verify that the required collector current range between 20 mA and 80 mA aligns with the specific application biasing requirements.

Part Context

This part belongs to the BFP196 series of low noise silicon bipolar RF transistors produced by Infineon Technologies. The suffix E6327HTSA1 indicates specific packaging and tape-and-reel configuration details defined by the manufacturer. It is distinct from other variants within the broader transistor portfolio based on its specific electrical characteristics and package type.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon resources for potential cross-reference options if direct replacement is necessary.

FAQ

What is the minimum noise figure specification for the BFP196?

The minimum noise figure (NFmin) is 1.3 dB at 900 MHz and 2.3 dB at 1.8 GHz, measured under specific biasing conditions.

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is rated at 12 V.

Is the BFP196 qualified for automotive applications?

Yes, a qualification report according to AEC-Q101 is available for this component.