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The Infineon BFP420H6433XTMA1 is a low noise silicon bipolar RF transistor designed for high gain and low noise amplifiers, oscillators up to 10 GHz, and other RF applications. It features a transition frequency (fT) of 25 GHz at IC = 30 mA, VCE = 3 V. The minimum noise figure (NFmin) is 1.1 dB at 1.8 GHz with IC = 5 mA, VCE = 2 V. Maximum ratings include a collector-emitter voltage (VCEO) of 4.5 V, collector current (IC) of 60 mA, and total power dissipation (Ptot) of 210 mW at TS ≤ 98 °C. The device is housed in an SOT343 package.
Verify the component against official Infineon datasheets to confirm electrical parameters and physical specifications. Ensure compatibility with your specific circuit requirements by checking maximum ratings and thermal characteristics. Confirm that the ordering suffix matches your exact needs, as it may affect packaging or specific variants. Always refer to the manufacturer's documentation for the most accurate and up-to-date information before finalizing procurement decisions.
Select this component when designing circuits requiring high gain and low noise performance at radio frequencies. Consider the 25 GHz transition frequency and 1.1 dB minimum noise figure at 1.8 GHz for optimal signal integrity. Evaluate the 4.5 V collector-emitter voltage and 60 mA collector current limits to ensure they align with your system's operational boundaries. The SOT343 package size should also be factored into your layout constraints.
The BFP420 series from Infineon Technologies comprises low noise silicon bipolar RF transistors. These components are engineered for applications demanding high gain and minimal noise figures, such as RF amplifiers and oscillators. The H6433XTMA1 suffix indicates specific packaging and tape-and-reel configuration details provided by the manufacturer.
Consult official Infineon documentation for verified substitute part numbers. Cross-reference electrical parameters like fT, NFmin, and maximum ratings to ensure functional equivalence. Verify package compatibility and pin configurations before implementing any replacement.
The transition frequency is 25 GHz, measured at IC = 30 mA and VCE = 3 V.
The minimum noise figure is 1.1 dB, measured at IC = 5 mA, VCE = 2 V, with ZS = ZSopt.
The maximum collector-emitter voltage is 4.5 V at TA = 25 °C.