BFP420H6740XTSA1

BFP420H6740XTSA1

$0.42
  • Description:RF TRANS NPN 5V 25GHZ PG-SOT-343
  • Series:-

SKU:7979a8e23d6d Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 5V 25GHZ PG-SOT-343
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5V
  • Frequency - Transition:25GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1.8GHz
  • Gain:21dB
  • Power - Max:160mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 20mA, 4V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-3D
  • Grade:-
  • Qualification:-

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BFP420H6740XTSA1

Overview

The BFP420H6740XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for high gain and low noise amplifiers, oscillators up to 10 GHz, and general RF applications. The device operates in an SOT-343 package with four pins (1=B, 2=E, 3=C, 4=E). Key electrical parameters include a transition frequency (fT) of 25 GHz at IC=30 mA and VCE=3 V. At 1.8 GHz, it achieves a minimum noise figure (NFmin) of 1.1 dB and a maximum stable gain (Gms) of 21 dB. Maximum ratings specify a collector-emitter voltage (VCEO) of 4.5 V, a collector current (IC) of 60 mA, and total power dissipation (Ptot) of 210 mW.

Feature Summary

  • Optimized for high gain and low noise amplifier designs
  • Capable of oscillator operation up to 10 GHz
  • Features a Pb-free and halogen-free package with visible leads

Applications

  • High gain and low noise amplifiers
  • Oscillators operating up to 10 GHz

Procurement Notes

Verify the specific ordering suffix H6740 against official Infineon documentation to confirm tape and reel specifications. Ensure compliance with AEC-Q101 qualification requirements if automotive standards are necessary for the target application. Confirm RoHS and halogen-free status matches project constraints.

Selection Notes

Select this component when a low noise figure of 1.1 dB at 1.8 GHz is required alongside high transition frequency performance. Evaluate the 4.5 V collector-emitter voltage limit and 60 mA maximum collector current against circuit biasing needs. Consider the SOT-343 package dimensions for PCB layout constraints.

Part Context

This part belongs to the BFP420 series of low noise silicon bipolar RF transistors from Infineon Technologies. It shares core electrical characteristics with other variants in the family but may differ in packaging or specific manufacturing lot attributes defined by the ordering code.

Replacement Considerations

Direct substitutes within the same family include BFP420H6327XTSA1 and BFP420H6327. Verify pinout compatibility and thermal resistance values before implementation.

BFP420H6740XTSA1BFP420H6740XTSA1
$0.42
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