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The BFP420H6740XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for high gain and low noise amplifiers, oscillators up to 10 GHz, and general RF applications. The device operates in an SOT-343 package with four pins (1=B, 2=E, 3=C, 4=E). Key electrical parameters include a transition frequency (fT) of 25 GHz at IC=30 mA and VCE=3 V. At 1.8 GHz, it achieves a minimum noise figure (NFmin) of 1.1 dB and a maximum stable gain (Gms) of 21 dB. Maximum ratings specify a collector-emitter voltage (VCEO) of 4.5 V, a collector current (IC) of 60 mA, and total power dissipation (Ptot) of 210 mW.
Verify the specific ordering suffix H6740 against official Infineon documentation to confirm tape and reel specifications. Ensure compliance with AEC-Q101 qualification requirements if automotive standards are necessary for the target application. Confirm RoHS and halogen-free status matches project constraints.
Select this component when a low noise figure of 1.1 dB at 1.8 GHz is required alongside high transition frequency performance. Evaluate the 4.5 V collector-emitter voltage limit and 60 mA maximum collector current against circuit biasing needs. Consider the SOT-343 package dimensions for PCB layout constraints.
This part belongs to the BFP420 series of low noise silicon bipolar RF transistors from Infineon Technologies. It shares core electrical characteristics with other variants in the family but may differ in packaging or specific manufacturing lot attributes defined by the ordering code.
Direct substitutes within the same family include BFP420H6327XTSA1 and BFP420H6327. Verify pinout compatibility and thermal resistance values before implementation.