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The BFP420H6801XTSA1 is a low noise silicon bipolar RF transistor manufactured by Infineon Technologies. It is designed for high gain and low noise amplifiers, oscillators up to 10 GHz, and handheld equipment. The device features a transition frequency (fT) of 25 GHz at IC = 30 mA and VCE = 3 V. At 1.8 GHz, it achieves a minimum noise figure (NFmin) of 1.1 dB and an outstanding Gms of 21 dB. The component utilizes a SOT-343 package with four pins configured as Base, Emitter, Collector, and Emitter.
Verify the specific ordering suffix H6801XTSA1 against official Infineon documentation to confirm packaging details such as reel or cut tape specifications. Ensure that the AEC-Q101 qualification status aligns with your project requirements before finalizing procurement plans.
Select this component when designing circuits requiring a transition frequency of 25 GHz and a minimum noise figure of 1.1 dB at 1.8 GHz. Consider the SOT-343 package constraints and the maximum collector-emitter voltage rating of 4.5 V for biasing stability in low voltage environments.
This part belongs to the BFP420 series of low noise silicon bipolar RF transistors from Infineon Technologies. The series is characterized by its suitability for RF front-end modules in communication devices, offering a balance of high gain and low noise performance within a compact surface-mount footprint.
Consult official Infineon cross-reference lists for verified substitutes. Generic replacements may not match the specific S-parameter and noise characteristics required for 1.8 GHz optimization.
The transition frequency (fT) is 25 GHz, measured at IC = 30 mA and VCE = 3 V.
The minimum noise figure (NFmin) is 1.1 dB at 1.8 GHz, measured at IC = 5 mA and VCE = 2 V.
Yes, a qualification report according to AEC-Q101 is available for this component.