BFP450H6327XTSA1

$0.46

Description：RF TRANS NPN 5V 24GHZ PG-SOT-343
Series：-

SKU:e43f2082906d Category: Bipolar RF Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 5V 24GHZ PG-SOT-343
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：5V
Frequency - Transition：24GHz
Noise Figure (dB Typ @ f)：1.25dB @ 1.8GHz
Gain：15.5dB
Power - Max：450mW
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 50mA, 4V
Current - Collector (Ic) (Max)：100mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-82A, SOT-343
Supplier Device Package：PG-SOT343-3D
Grade：-
Qualification：-

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BFP450H6327XTSA1

Overview

The BFP450H6327XTSA1 is a surface mount high linearity wideband silicon NPN RF bipolar transistor from Infineon Technologies. It utilizes a grounded emitter (SIEGET) architecture and belongs to the fourth generation of RF bipolar transistors. The device features a transition frequency (fT) of 24 GHz at VCE = 3 V, IC = 90 mA. Absolute maximum ratings include a collector-emitter voltage (VCEO) of 4.5 V, a collector current (IC) of 170 mA, and total power dissipation (Ptot) of 500 mW. DC current gain (hFE) ranges from 60 to 130 depending on bias conditions. At 1.9 GHz with VCE = 3 V and IC = 90 mA, it provides a minimum noise figure (NFmin) of 1.7 dB, a maximum power gain (Gma) of 15.5 dB, and an output third-order intercept point (OIP3) of 31 dBm.

Feature Summary

Grounded emitter SIEGET structure for enhanced ease of use
High linearity characteristics suitable for energy efficiency applications
Wideband operation capability up to 3 GHz

Applications

Broadband amplifiers
Low noise amplifiers for sub-1 GHz ISM band applications
High linearity amplifiers

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the ordering suffix matches the specific reel quantity requirements. Ensure handling procedures strictly adhere to electrostatic discharge (ESD) precautions due to the sensitivity of the semiconductor junctions during storage and assembly.

Selection Notes

Evaluate the trade-off between low noise performance and high linearity based on the specific operating frequency and bias current. The device requires careful impedance matching to achieve optimal noise figures and power gains across its wide bandwidth. Verify that the thermal management design accommodates the specified junction-to-soldering point thermal resistance under maximum power dissipation conditions.

Part Context

This component is part of Infineon's established fourth-generation RF bipolar transistor family. It is designed to remain cost-competitive while maintaining high performance standards. The product is qualified for industrial applications in accordance with JEDEC JESD47, JESD22, J-STD-020, and AEC-Q101 standards.