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Product Detailed Parameters
- Description：RF TRANS NPN 4.5V 40GHZ SOT-343
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：4.5V
- Frequency - Transition：40GHz
- Noise Figure (dB Typ @ f)：0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
- Gain：24dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 30mA, 3V
- Current - Collector (Ic) (Max)：50mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-82A, SOT-343
- Supplier Device Package：PG-SOT343-3D
- Grade：-
- Qualification：-
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Overview
The BFP640E6327BTSA1 is an NPN Silicon Germanium RF transistor manufactured by Infineon Technologies. It features a transition frequency of 40 GHz and operates with a collector-emitter voltage of 4 V and a maximum collector current of 50 mA. The device provides a typical noise figure of 0.65 dB at 1.8 GHz and 1.2 dB at 6 GHz, alongside a maximum stable gain of 24 dB at 1.8 GHz. Total power dissipation is rated at 200 mW, with a junction temperature limit of 150 °C. It is housed in a PG-SOT343-3D surface-mount package.
Feature Summary
- High gain low noise RF transistor
- Gold metallization for extra high reliability
- Qualified according AEC Q101
Applications
- CDMA applications
- WLAN applications
Procurement Notes
Verify component authenticity through authorized channels. Confirm RoHS compliance status and check for the specific E6327 ordering suffix to ensure correct packaging configuration. Review datasheet specifications against design requirements before integration.
Selection Notes
Evaluate thermal resistance characteristics and maximum stable gain requirements. Ensure operating conditions remain within specified collector-emitter voltage and current limits. Consider package compatibility and PCB layout constraints for optimal RF performance.
Part Context
This component belongs to the BFP640 series of NPN Silicon Germanium RF transistors. It utilizes 70 GHz fT-Silicon Germanium technology for enhanced high-frequency operation. The series is designed for wireless communication systems requiring high reliability and low noise performance.
Replacement Considerations
BFP640H6327XTSA1
FAQ
What is the transition frequency of the BFP640?
The transition frequency (fT) is 40 GHz when measured at IC = 30 mA, VCE = 3 V, and f = 1 GHz.
What is the maximum stable gain specification?
The maximum stable gain (Gms) is 24 dB at 1.8 GHz, measured at IC = 30 mA, VCE = 3 V.
Is the BFP640 qualified for automotive applications?
Yes, the component is qualified according to AEC Q101 standards.
