BFP740ESDH6327XTSA1

Overview

The BFP740ESDH6327XTSA1 is a SiGe:C NPN RF heterojunction bipolar transistor (HBT) with integrated ESD protection. It operates in the SOT343 package. Key electrical parameters include a collector-emitter voltage of 4.2 V, a transition frequency of 45 GHz, and a maximum power dissipation of 160 mW. At 2.4 GHz, it achieves a minimum noise figure of 0.65 dB and a maximum power gain of 25.5 dB. The device supports an input power of 21 dBm and withstands 2 kV ESD stress.

Feature Summary

• Integrates robust electrostatic discharge protection circuits to ensure high reliability against handling stresses.
• Delivers wideband performance suitable for diverse wireless communication frequencies.
• Combines low noise characteristics with high linearity metrics for signal integrity.

Applications

• Wireless communications including WLAN, WiMax, and UWB
• Satellite navigation systems such as GPS, GLONASS, BeiDou, and Galileo
• Multimedia applications like portable TV, CATV, and FM radio

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific ordering code matches the required package and marking. Ensure storage and handling procedures adhere to ESD sensitivity guidelines to prevent damage prior to assembly.

Selection Notes

Select this component for designs requiring integrated ESD protection alongside high-frequency RF performance. Consider the 4.2 V supply limit and 160 mW thermal dissipation constraints. Evaluate the trade-off between noise figure and gain based on the specific operating frequency and bias current requirements.

Part Context

This part belongs to the BFP740 series of SiGe:C RF transistors manufactured by Infineon Technologies. It is specifically designed for applications demanding both high RF performance and physical robustness against electrostatic discharge events without external protection components.

Replacement Considerations

Direct replacements within the same family include the BFP740ESD. Verify pin configuration and electrical specifications match before substitution.

FAQ

What is the maximum ESD robustness rating?

The device withstands 2 kV ESD stress according to the Human Body Model (HBM) standard.

What is the transition frequency?

The transition frequency is 45 GHz at a collector current of 25 mA and a collector-emitter voltage of 3 V.

What is the maximum collector-emitter voltage?

The maximum collector-emitter voltage is 4.2 V with an open base.