ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：-
- Power - Max：330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 3mA, 1V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The BFQ31ATA is an RF small signal bipolar transistor manufactured by Diodes Incorporated. It is a silicon NPN device designed for ultra-high frequency band applications. The component features a maximum collector current of 0.1 A and a collector-emitter voltage rating of 15 V. Key electrical parameters include a minimum DC current gain (hFE) of 100 and a maximum collector capacitance of 1.7 pF. It offers a minimum power gain of 15 dB and operates at temperatures up to 150 °C. The device is housed in a surface-mount SOT-23 package.
Feature Summary
- Optimized for ultra-high frequency RF signal amplification
- High DC current gain ensures efficient signal processing
- Low collector capacitance supports high-frequency performance
- Surface-mount construction facilitates automated PCB assembly
Applications
- RF amplifier stages in communication equipment
- Signal conditioning in wireless transceivers
- Ultra-high frequency oscillator circuits
Procurement Notes
Verify the manufacturer marking on the component body against official Diodes Incorporated documentation to confirm authenticity. Ensure the part number suffix matches the specific tape-and-reel or cut-tape configuration required for your manufacturing line. Cross-reference the date code with the manufacturer's production records to verify recent fabrication batches.
Selection Notes
Select this component when designing circuits requiring NPN amplification in the UHF band with moderate current handling capabilities. Compare the 1.7 pF capacitance and 15 V breakdown voltage against circuit requirements to ensure compatibility with low-voltage RF systems. Evaluate the thermal resistance of the SOT-23 package against the expected power dissipation in the final application environment.
Part Context
This transistor belongs to the BFQ series of RF small signal devices, which are widely used in consumer electronics and industrial radio frequency applications. The BFQ31ATA variant specifically targets cost-sensitive designs requiring reliable UHF performance. It serves as a fundamental active element in impedance matching networks and low-noise amplifier topologies within compact form factors.
Replacement Considerations
Consult Diodes Incorporated official substitution guides for direct equivalents. Verify pinout compatibility and thermal characteristics before replacing with generic NPN transistors. Ensure any substitute maintains the same ultra-high frequency bandwidth and gain specifications.
