BFR 181T E6327

BFR 181T E6327

$0.10
  • Description:RF TRANS NPN 12V 8GHZ PG-SC75-3D
  • Series:-

SKU:0f9d8ed80750 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 8GHZ PG-SC75-3D
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1.45dB ~ 1.8dB @ 900MHz ~ 1.8GHz
  • Gain:19.5dB
  • Power - Max:175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 5mA, 8V
  • Current - Collector (Ic) (Max):20mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:PG-SC75-3D
  • Grade:-
  • Qualification:-

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BFR 181T E6327

Overview

The BFR181T is an NPN silicon RF transistor designed for low noise and high-gain broadband amplifiers. It operates with collector currents ranging from 0.5 mA to 12 mA, featuring a transition frequency (fT) of 8 GHz. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 12 V, a maximum DC current gain (hFE) of 200 at IC=5mA/VCE=8V, and a typical noise figure of 1.45 dB at 900 MHz. The device supports a total power dissipation of 175 mW and functions within an ambient temperature range of -65°C to +150°C.

Feature Summary

  • Optimized for low noise and high-gain broadband amplifier applications
  • High transition frequency capability up to 8 GHz
  • Low noise figure performance at 900 MHz and 1.8 GHz
  • Suitable for operation across a wide ambient temperature range

Applications

  • Low noise broadband amplifiers
  • RF signal processing circuits requiring high gain
  • Amplifier stages operating at frequencies around 900 MHz and 1.8 GHz

Procurement Notes

Verify the specific ordering suffix and package type against official Infineon documentation before procurement. Confirm that the component meets all required environmental and electrical specifications for the intended application. Ensure handling precautions are observed due to electrostatic discharge sensitivity.

Selection Notes

Select this component when designing circuits requiring an NPN silicon RF transistor with an 8 GHz transition frequency. Consider the 175 mW power dissipation limit and the -65°C to +150°C operating temperature range. Evaluate the noise figure and gain characteristics at the target operating frequency and bias conditions.

Part Context

The BFR181T belongs to the family of NPN silicon RF transistors manufactured by Infineon Technologies. It is specifically engineered for radio frequency applications, offering a balance of high gain and low noise performance in a compact surface-mount package suitable for modern electronic designs.

Replacement Considerations

Consult official Infineon documentation or authorized distributors for verified replacement part numbers. Do not substitute with generic equivalents without confirming matching electrical parameters and pin configurations.

BFR 181T E6327BFR 181T E6327
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