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The BFR181T is an NPN silicon RF transistor designed for low noise and high-gain broadband amplifiers. It operates with collector currents ranging from 0.5 mA to 12 mA, featuring a transition frequency (fT) of 8 GHz. Key electrical parameters include a collector-emitter breakdown voltage (V(BR)CEO) of 12 V, a maximum DC current gain (hFE) of 200 at IC=5mA/VCE=8V, and a typical noise figure of 1.45 dB at 900 MHz. The device supports a total power dissipation of 175 mW and functions within an ambient temperature range of -65°C to +150°C.
Verify the specific ordering suffix and package type against official Infineon documentation before procurement. Confirm that the component meets all required environmental and electrical specifications for the intended application. Ensure handling precautions are observed due to electrostatic discharge sensitivity.
Select this component when designing circuits requiring an NPN silicon RF transistor with an 8 GHz transition frequency. Consider the 175 mW power dissipation limit and the -65°C to +150°C operating temperature range. Evaluate the noise figure and gain characteristics at the target operating frequency and bias conditions.
The BFR181T belongs to the family of NPN silicon RF transistors manufactured by Infineon Technologies. It is specifically engineered for radio frequency applications, offering a balance of high gain and low noise performance in a compact surface-mount package suitable for modern electronic designs.
Consult official Infineon documentation or authorized distributors for verified replacement part numbers. Do not substitute with generic equivalents without confirming matching electrical parameters and pin configurations.