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The BFR 183T is an NPN silicon RF transistor designed for low-noise, high-gain broadband amplifiers operating at collector currents between 2 mA and 30 mA. It features a transition frequency (fT) of 8 GHz and a noise figure of 1.2 dB at 900 MHz. Key electrical ratings include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 65 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature of 83°C. The device operates within a junction temperature range of -65°C to +150°C and utilizes the SC75 package.
Verify component authenticity by checking markings against official datasheet specifications. Confirm package type matches the SC75 designation. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Review thermal resistance data for proper heat dissipation planning in final designs.
Select this component when designing amplifiers requiring high gain and low noise in the sub-2 GHz range. Consider the 250 mW power dissipation limit and thermal resistance values for adequate cooling. Verify that the required collector current falls within the 2 mA to 30 mA optimal operating range for best performance characteristics.
This component belongs to Infineon's portfolio of NPN silicon RF transistors. It shares similar design principles with other devices in the series but offers specific electrical characteristics tailored for broadband amplification. The SC75 package provides a compact form factor suitable for surface-mount assembly in space-constrained electronic designs.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources or authorized distributors for verified equivalent components if direct replacement is required.