BFR 183T E6327

BFR 183T E6327

$0.09
  • Description:RF TRANS NPN 12V 8GHZ PG-SC75-3D
  • Series:-

SKU:0922a34639c0 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 12V 8GHZ PG-SC75-3D
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain:19.5dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 15mA, 8V
  • Current - Collector (Ic) (Max):65mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:PG-SC75-3D
  • Grade:-
  • Qualification:-

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BFR 183T E6327

Overview

The BFR 183T is an NPN silicon RF transistor designed for low-noise, high-gain broadband amplifiers operating at collector currents between 2 mA and 30 mA. It features a transition frequency (fT) of 8 GHz and a noise figure of 1.2 dB at 900 MHz. Key electrical ratings include a collector-emitter voltage (VCEO) of 12 V, a maximum collector current (IC) of 65 mA, and a total power dissipation (Ptot) of 250 mW at a case temperature of 83°C. The device operates within a junction temperature range of -65°C to +150°C and utilizes the SC75 package.

Feature Summary

  • Optimized for low-noise and high-gain broadband amplifier applications
  • High transition frequency supporting operation up to 8 GHz
  • Low noise figure performance at 900 MHz
  • Suitable for collector currents ranging from 2 mA to 30 mA

Applications

  • Low-noise broadband amplifiers
  • High-gain RF signal processing circuits
  • Wireless communication systems requiring low noise figures

Procurement Notes

Verify component authenticity by checking markings against official datasheet specifications. Confirm package type matches the SC75 designation. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Review thermal resistance data for proper heat dissipation planning in final designs.

Selection Notes

Select this component when designing amplifiers requiring high gain and low noise in the sub-2 GHz range. Consider the 250 mW power dissipation limit and thermal resistance values for adequate cooling. Verify that the required collector current falls within the 2 mA to 30 mA optimal operating range for best performance characteristics.

Part Context

This component belongs to Infineon's portfolio of NPN silicon RF transistors. It shares similar design principles with other devices in the series but offers specific electrical characteristics tailored for broadband amplification. The SC75 package provides a compact form factor suitable for surface-mount assembly in space-constrained electronic designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official manufacturer resources or authorized distributors for verified equivalent components if direct replacement is required.

BFR 183T E6327BFR 183T E6327
$0.09
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